參數(shù)資料
型號(hào)： RF1S50N06SM
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi)： JFETs
英文描述： 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs
中文描述： 50 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁(yè)數(shù)： 3/8頁(yè)
文件大?。?/td> 74K
代理商： RF1S50N06SM
4-469
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
175
P
T
C
, CASE TEMPERATURE (
o
C)
50
40
30
20
10
0
25
50
75
100
125
150
175
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
60
1
0.1
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, RECTANGULAR PULSE DURATION (s)
P
DM
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
SINGLE PULSE
t
1
t
2
T
Z
θ
J
,
0.01
0.02
0.05
0.1
0.2
0.5
2
400
100
10
1
1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
1ms
100
μ
s
10ms
100ms
DC
V
DSS(MAX)
= 60V
I
D
,
T
C
= 25
C
T
J
= MAX RATED
SINGLE PULSE
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
10
2
10
3
t, PULSE WIDTH (ms)
V
GS
= 20V
V
GS
= 10V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES ABOVE 25
o
C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
I
I25
175
-------150
–
=
I
D
,
40
T
C
= 25
o
C
RFG50N06, RFP50N06, RF1S50N06SM
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參數(shù)描述
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