參數(shù)資料
型號(hào)： RF1S30P05SM
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 30A, 50V, 0.065 Ohm,N-Channel PowerMOSFET(30A, 50V, 0.065 Ω,N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管)
中文描述： 30 A, 50 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁(yè)數(shù)： 4/8頁(yè)
文件大?。?/td> 70K
代理商： RF1S30P05SM
4-129
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
-100
-10
-1
0.1
1
10
100
t
AV
, TIME IN AVALANCHE (ms)
I
A
,
If R = 0
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
V
GS
= -5V
V
GS
= -6V
V
GS
= -7V
0
0
-2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-4
-6
-8
-10
I
D
-30
-45
-60
-75
V
GS
= -20V
V
GS
= -10V
V
GS
= -8V
-15
V
GS
= -4.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
0
-2
-4
-6
-8
-10
0
-30
-45
-75
-60
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= -15V
-15
-55
o
C
25
o
C
175
o
C
2
1.5
1
0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
0.5
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= -10V, I
D
= 30A
200
O
2
1.5
1
0.5
0
-80
-40
0
40
80
160
120
200
T
J
, JUNCTION TEMPERATURE (
o
C)
N
V
GS
= V
DS
, I
D
=-250
μ
A
2
1.5
1
0.5
0
-80
-40
0
40
80
120
160
200
N
B
T
J,
JUNCTION TEMPERATURE (
o
C)
I
D
= 250
μ
A
RFG30P05, RFP30P05, RF1S30P05SM
相關(guān)PDF資料
PDF描述
RFP30P05 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs
RFP30P06 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs
RFG30P05 30A, 50V, 0.065 Ohm,N-Channel PowerMOSFET(30A, 50V, 0.065 Ω,N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管)
RF1S30P06 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs
RF1S30P06SM 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs(30A, 50V, 0.066 Ω,P溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RF1S30P05SM9A 功能描述:MOSFET -50V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RF1S30P06 制造商:Rochester Electronics LLC 功能描述:- Bulk
RF1S30P06SM 制造商:Rochester Electronics LLC 功能描述:- Bulk
RF1S30P06SM9A 功能描述:MOSFET -60V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RF1S40N10 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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