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參數(shù)資料
| 型號(hào)： | RF1S40N10SM |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 40 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 371K |
| 代理商： | RF1S40N10SM |
2002 Fairchild Semiconductor Corporation
RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Rev. C
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to application notes AN9321 and AN9322.
FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
FIGURE 5. SATURATION CHARACTERISTICS
FIGURE 6. TRANSFER CHARACTERISTICS
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
16
8
0
25
50
75
100
125
150
24
40
32
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
175
100
10
1
0.1
1
10
100
V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
V
DSS(MAX)
= 100V
I
D
,
T
C
= 25
o
C
SINGLE PULSE
T
J
= MAX RATED
DC OPERATION
t
AV
= (L)(I
AS
)/(1.3 RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)LN[(I
AS
*R)/(1.3 RATED BV
DSS
- V
DD
) + 1]
0.1
0.01
If R = 0
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
AV
, TIME IN AVALANCHE (ms)
I
A
,
1
10
10
100
1
100
80
60
40
20
0
0
2
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
4
6
8
10
I
D
,
V
G
0
V
GS
=7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
T
C
= 25
C
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
0
2
4
6
8
10
V
GS
,
GATE TO SOURCE VOLTAGE (V)
I
D
100
80
60
40
20
0
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
-55
o
C
25
o
C
175
o
C
RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM
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