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參數(shù)資料
| 型號(hào)： | RF1S530SM |
| 廠商： | INTERSIL CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs(14A, 100V, 0.160 Ohm,N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 14 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大小： | 76K |
| 代理商： | RF1S530SM |
1
TM
POSSIBLE SUBSTITUTE PRODUCT
File Number
1575.7
IRF530, RF1S530SM
14A, 100V, 0.160 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA17411.
Features
14A, 100V
r
DS(ON)
= 0.160
Single Pulse Avalanche Energy Rated
SOA is Power Dissipation Limited
Nanosecond Switching Speeds
Linear Transfer Characteristics
High Input Impedance
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC TO-220AB
JEDEC TO-263AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF530
TO-220AB
IRF530
RF1S530SM
TO-263AB
RF1S530
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in the tape and reel, i.e.,
RF1S540SM9A.
G
D
S
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
DRAIN
(FLANGE)
GATE
SOURCE
Data Sheet
May 2000
[ /Title
(IRF53
0,
RF1S5
30SM)
/Sub-
ject
(14A,
100V,
0.160
Ohm,
N-
Chan-
nel
Power
MOS-
FETs)
/Autho
r ()
/Key-
words
(14A,
100V,
0.160
Ohm,
N-
Chan-
nel
Power
MOS-
FETs,
Inter-
sil
Corpo-
ration,
TO-
220AB
, TO-
263AB
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143
Intersil and Design is a trademark of Intersil Corporation.
Copyright
Intersil Corporation 2000
NOT RECOMMENDED FOR NEW DESIGNS
IRF530N
相關(guān)PDF資料 |
PDF描述 |
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| RF1S540SM | 28A, 100V, 0.077 Ohm,N-Channel PowerMOSFET(28A, 100V, 0.077 Ohm,N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管) |
| RF1S60P03SM | 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs(60A, 30V, 0.027 Ω,P溝道功率MOS場(chǎng)效應(yīng)管) |
| RFP60P03 | 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs |
| RFG60P03 | 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs(60A, 30V, 0.027 Ω,P溝道功率MOS場(chǎng)效應(yīng)管) |
| RFP60P03 | 60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RF1S530SM9A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S530SM9AS2457 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S540 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S540SM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S540SM9A | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 28A I(D) | TO-263AB |
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