- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374583 > RF1S540SM (INTERSIL CORP) 28A, 100V, 0.077 Ohm,N-Channel PowerMOSFET(28A, 100V, 0.077 Ohm,N溝道增強型功率MOS場效應(yīng)管) PDF資料下載
參數(shù)資料
| 型號： | RF1S540SM |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 28A, 100V, 0.077 Ohm,N-Channel PowerMOSFET(28A, 100V, 0.077 Ohm,N溝道增強型功率MOS場效應(yīng)管) |
| 中文描述： | 28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 75K |
| 代理商： | RF1S540SM |
4
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
10
100
10
300
300
1
1
100
μ
s
10ms
1ms
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
T
J
= MAX RATED
T
C
= 25
o
C
SINGLE PULSE
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
0
0
12
24
36
48
10
20
30
40
50
60
V
GS
= 7V
V
GS
= 5V
V
GS
= 4V
V
GS
= 10V
V
GS
= 8V
V
GS
= 6V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
10
0
1
2
3
5
20
30
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 6V
V
GS
= 10V
40
4
V
GS
= 4V
V
GS
= 7V
V
GS
= 5V
50
V
GS
= 8V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
4
6
8
10
2
0.1
1
10
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
100
25
o
C
175
o
C
V
DS
≥
50V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
0.4
0.6
0.8
25
50
75
100
r
D
,
I
D
, DRAIN CURRENT (A)
125
1.0
0
0.2
V
GS
= 10V
V
GS
= 20V
O
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
N
3.0
1.8
1.2
0.6
0
-60
-40
-20
0
20
40
60
T
J
, JUNCTION TEMPERATURE (
o
C)
100 120 140 160 180
2.4
80
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 28A
IRF540, RF1S540SM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RF1S60P03SM | 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs(60A, 30V, 0.027 Ω,P溝道功率MOS場效應(yīng)管) |
| RFP60P03 | 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs |
| RFG60P03 | 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs(60A, 30V, 0.027 Ω,P溝道功率MOS場效應(yīng)管) |
| RFP60P03 | 60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs |
| RF1S630SM | 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RF1S540SM9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 28A I(D) | TO-263AB |
| RF1S60P03 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs |
| RF1S60P03SM | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs |
| RF1S60P03SM9A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 60A I(D) | TO-263AB |
| RF1S630 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。