參數(shù)資料
型號(hào)： RF1S40N10SM
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs
中文描述： 40 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 371K
代理商： RF1S40N10SM
2002 Fairchild Semiconductor Corporation
RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Rev. C
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFG40N10, RFP40N10,
RF1S40N10, RF1S40N10SM
100
100
±
20
UNITS
V
V
V
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (R
GS
= 1M
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
Derate Above 25
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
DSS
DGR
GS
D
DM
40
100
A
A
AS
Figures 4, 12, 13
160
1.07
-55 to 175
D
o
W
W/
o
C
J
, T
STG
o
C
L
pkg
300
260
o
o
C
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. T
2. Repetitive Rating: pulse width limited by maximum junction temperature.
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 9)
100
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 8)
2
-
4
V
Zero Gate Voltage Drain Current
I
DSS
V
V
DS
GS
= 80V,
= 0V
T
C
= 25
o
C
-
-
1
μ
A
T
C
= 150
o
C
-
-
50
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
±
100
nA
Drain to Source On Resistance
r
DS(ON)
I
D
= 40A, V
GS
= 10V (Figure 7)
-
-
0.040
Turn-On Time
t
ON
V
R
(Figure 11)
DD
L
= 2.5
= 50V, I
D
GS
= 20A,
= 10V, R
, V
GS
= 4.2
-
-
80
ns
Turn-On Delay Time
t
d(ON)
-
17
-
ns
Rise Time
t
r
-
30
-
ns
Turn-Off Delay Time
t
d(OFF)
-
42
-
ns
Fall Time
t
f
-
20
-
ns
Turn-Off Time
t
OFF
-
-
100
ns
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 20V
V
I
D
R
(Figures 11)
DD
= 40A,
L
= 2.0
= 80V,
-
-
300
nC
Gate Charge at 10V
Q
g(10)
V
GS
= 0V to 10V
-
-
150
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 2V
-
-
7.5
nC
Thermal Resistance Junction to Case
R
θ
JC
-
-
0.94
o
C/W
Thermal Resistance Junction to Ambient
R
θ
JA
TO-247
-
-
30
o
C/W
TO-220AB and TO-263AB
-
-
62
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 40A
-
-
1.5
V
Reverse Recovery Time
t
rr
I
SD
= 40A, dI
SD
/dt = 100A/
μ
s
-
-
200
ns
RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM
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