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參數(shù)資料
| 型號： | RFG30P06 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs(30A, 50V, 0.066 Ω,P溝道增強型功率MOS場效應(yīng)管) |
| 中文描述： | 30 A, 60 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 71K |
| 代理商： | RFG30P06 |
4-133
File Number
2437.3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
Intersil Corporation 1999
RFG30P06, RFP30P06, RF1S30P06SM
30A, 60V 0.065 Ohm, P-Channel Power
MOSFETs
These are P-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI circuits, gives optimum
utilization of silicon, resulting in outstanding performance.
They are designed for use in applications such as switching
regulators, switching converters, motor drivers, and relay
drivers. These transistors can be operated directly from
integrated circuits.
Formerly developmental type TA09834.
Features
30A, 60V
r
DS(ON)
= 0.065
Temperature Compensating PSPICE
Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
175
o
C Operating Temperature
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
JEDEC STYLE TO-247
JEDEC TO-220AB
JEDEC TO-263AB
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFG30P06
TO-247
RFG30P06
RFP30P06
TO-220AB
RFP30P06
RF1S30P06SM
TO-263AB
F1S30P06
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, i.e. RF1S30P06SM9A.
D
G
S
DRAIN
(BOTTOM
SIDE METAL)
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
GATE
SOURCE
Data Sheet
July 1999
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