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參數(shù)資料
| 型號： | RF1S40N10 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | CAP 470PF 200V 1% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22 |
| 中文描述： | 40 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 371K |
| 代理商： | RF1S40N10 |
2002 Fairchild Semiconductor Corporation
RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Rev. C
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
NOTE: Refer to application notes AN9321 and AN9322.
FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
FIGURE 5. SATURATION CHARACTERISTICS
FIGURE 6. TRANSFER CHARACTERISTICS
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
16
8
0
25
50
75
100
125
150
24
40
32
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
175
100
10
1
0.1
1
10
100
V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
V
DSS(MAX)
= 100V
I
D
,
T
C
= 25
o
C
SINGLE PULSE
T
J
= MAX RATED
DC OPERATION
t
AV
= (L)(I
AS
)/(1.3 RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)LN[(I
AS
*R)/(1.3 RATED BV
DSS
- V
DD
) + 1]
0.1
0.01
If R = 0
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
AV
, TIME IN AVALANCHE (ms)
I
A
,
1
10
10
100
1
100
80
60
40
20
0
0
2
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
4
6
8
10
I
D
,
V
G
0
V
GS
=7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
T
C
= 25
C
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
0
2
4
6
8
10
V
GS
,
GATE TO SOURCE VOLTAGE (V)
I
D
100
80
60
40
20
0
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
-55
o
C
25
o
C
175
o
C
RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RF1S40N10SM | 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs |
| RF1S45N06LESM | 45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs(45A, 60V, 0.028 Ω,邏輯電平,N溝道功率MOS場效應(yīng)管) |
| RFP45N06LE | 45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs |
| RF1S45N06SM | 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs |
| RFG45N06 | 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RF1S40N10LE | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S40N10LESM | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs |
| RF1S40N10LESM9A | 功能描述:MOSFET 100V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1S40N10SM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S40N10SM9A | 功能描述:MOSFET USE 512-FDB3682 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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