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參數(shù)資料
| 型號： | RF1S40N10SM |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 40 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 413K |
| 代理商： | RF1S40N10SM |
5
FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 14. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE15. SWITCHINGWAVEFORMSFORCONSTANTGATE
CURRENT
Test Circuits and Waveforms
FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 17. UNCLAMPED ENERGY WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
-80
-40
0
40
80
120
160
N
T
T
J
, JUNCTION TEMPERATURE (
o
C)
200
1.50
1.00
0.75
0.50
1.25
V
GS
= V
DS
, I
D
= 250
μ
A
1.50
1.00
0.75
0.50
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
200
1.25
I
D
= 250
μ
A
3500
2800
1400
0
0
5
10
15
20
25
C
C
RSS
2100
C
ISS
C
OSS
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
700
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
100
75
50
25
0
20
(
)
)
---------------------
t, TIME (
μ
s)
80
(
)
)
---------------------
5.00
3.75
2.50
1.25
0
V
D
,
V
G
,
R
L
= 2.5
I
G(REF)
= 1.7mA
V
GS
= 5V
PLATEAU VOLTAGES IN
DESCENDING ORDER:
V
DD
= BV
DSS
V
DD
= 0.75 BV
DSS
V
DD
= 0.50 BV
DSS
V
DD
= 0.25 BV
DSS
V
DD
= BV
DSS
V
DD
= BV
DSS
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
RFG40N10LE, RFP40N10LE, RF1S40N10LESM
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| RFG40N10LE | 40A, 100V, 0.040 Ohm, Logic Level,N-Channel Power MOSFETs(40A, 100V, 0.040 Ω,邏輯電平,N溝道功率MOS場效應(yīng)管) |
| RF1S40N10 | CAP 470PF 200V 1% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22 |
| RF1S40N10SM | 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs |
| RF1S45N06LESM | 45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs(45A, 60V, 0.028 Ω,邏輯電平,N溝道功率MOS場效應(yīng)管) |
| RFP45N06LE | 45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RF1S40N10SM9A | 功能描述:MOSFET USE 512-FDB3682 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1S42N03L | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RF1S42N03LSM | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RF1S45N02L | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RF1S45N02LSM | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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