參數(shù)資料
型號(hào): RF1S50N06SM
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs
中文描述: 50 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁數(shù): 4/8頁
文件大?。?/td> 74K
代理商: RF1S50N06SM
4-470
NOTE: Refer to Intersil Application Notes 9321 and 9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
300
100
10
1
0.01
0.1
1
10
t
AV,
TIME IN AVALANCHE (ms)
If R = 0
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
If R
0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
I
A
A
125
100
75
50
25
0
0
1.5
3.0
4.5
6.0
7.5
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 10V
V
GS
= 8V
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
0
1
2
3
4
5
6
7
8
9
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
125
100
75
50
25
0
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
-55
o
C
175
o
C
25
o
C
2.5
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
N
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 50A
O
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
160
120
200
T
T
J
, JUNCTION TEMPERATURE (
o
C)
N
V
GS
= V
DS
, I
D
= 250
μ
A
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
200
N
B
T
J
, JUNCTION TEMPERATURE (
o
C)
I
D
= 250
μ
A
RFG50N06, RFP50N06, RF1S50N06SM
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