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參數(shù)資料
| 型號(hào)： | RF1K49224 |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 3.5A/2.5A, 30V, 0.060/0.150 Ohms, Complementary LittleFET⑩ Power MOSFET |
| 中文描述： | 3.5 A, 30 V, 0.132 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 文件頁(yè)數(shù)： | 5/14頁(yè) |
| 文件大小： | 223K |
| 代理商： | RF1K49224 |
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FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
Typical Performance Curves (N-Channel)
(Continued)
0
3.0
4.5
6.0
7.5
1.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
5
10
15
20
25
150
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
I
D
,
-55
o
C
25
o
C
50
100
150
200
250
0
6
4
7
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
D
,
I
D
= 0.5A
3
8
9
10
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
D
= 1.75A
I
D
= 3.5A
I
D
= 7.0A
O
)
V
DD
= 15V
0
-80
0.5
1.0
1.5
2.0
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
O
V
GS
= 10V, I
D
= 3.5A
-80
-40
0
40
80
120
160
0
0.5
1.0
1.5
2.0
N
T
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= 250
μ
A
1000
750
250
00
5
10
15
20
25
C
C
RSS
500
C
ISS
C
OSS
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
= C
DS
+ C
GD
RF1K49224
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