參數(shù)資料
型號(hào)： RF1S23N06LESM
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 23A, 60V, 0.065 Ohm, Logic Level,N-Channel Power MOSFETs(23A, 60V, 0.065 Ω,邏輯電平,N溝道功率MOS場(chǎng)效應(yīng)管)
中文描述： 23 A, 60 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁數(shù)： 7/8頁
文件大?。?/td> 411K
代理商： RF1S23N06LESM
7
PSPICE Electrical Model
SUBCKT 23N06LE 2 1 3 ;
rev 9/27/95
CA 12 8 1.1e-9
CB 15 14 1.1e-9
CIN 6 8 8.5e-10
DBODY 7 5 DBODYMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 69.6
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRES 6 21 19 8 1
EVTEMP 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 4.4e-9
LSOURCE 3 7 4.5e-9
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 1.5e-2
RGATE 9 20 3.1
RLDRAIN 2 5 10
RLGATE 1 9 44
RLSOURCE 3 7 45
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 9e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*70),3.5))}
.MODEL DBODYMOD D (IS = 1.3e-12 RS = 7.5e-3 TRS1 = 1e-4 TRS2 = 3e-6 CJO = 1.07e-9 TT = 4.9e-8 N = 1.03 M = 0.5)
.MODEL DBREAKMOD D (RS = 3.5e-1 TRS1 = 1e-4 TRS2 = 0)
.MODEL DPLCAPMOD D (CJO = 7.5e-10 IS = 1e-30 N = 10 M = 0.85)
.MODEL MMEDMOD NMOS (VTO = 2.0 KP = 4 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 3.1)
.MODEL MSTROMOD NMOS (VTO = 2.34 KP = 43 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL MWEAKMOD NMOS (VTO = 1.74 KP = 0.13 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 31 RS = 0.1)
.MODEL RBREAKMOD RES (TC1 = 1.2e-3 TC2 = -5e-7)
.MODEL RDRAINMOD RES (TC1 = 9e-3 TC2 = 2e-5)
.MODEL RSLCMOD RES (TC1 = 3.5e-3 TC2 = 7e-6)
.MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-6)
.MODEL RVTHRESMOD RES (TC1 = -1.8e-3 TC2 = -5.8e-6)
.MODEL RVTEMPMOD RES (TC1 = -1.7e-3 TC2 = 1e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.5 VOFF= -2.8)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.8 VOFF= -4.5)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.5 VOFF= 0.5)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.5 VOFF= -0.5)
.ENDS
NOTE: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options;
IEEE Power Electronics Specialist Conference Records, 1991.
18
22
+
-
6
8
+
-
5
51
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17
18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
6
RFP23N06LE, RF1S23N06LESM
相關(guān)PDF資料
PDF描述
RFP23N06LE 23A, 60V, 0.065 Ohm, Logic Level,N-Channel Power MOSFETs(23A, 60V, 0.065 Ω,邏輯電平,N溝道功率MOS場(chǎng)效應(yīng)管)
RF1S25N06SM 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs
RF1S25N06 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs
RF1S25N06SM 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs
RF1S30N06LESM 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs(30A, 60V、額定ESD值0.047Ω邏輯電平N溝道功率MOS場(chǎng)效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RF1S23N06LESM9A 制造商:Rochester Electronics LLC 功能描述:- Bulk
RF1S25N06 功能描述:MOSFET Power MOSFET N-Ch 60V/25a/0.047 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RF1S25N06SM 制造商:Rochester Electronics LLC 功能描述:- Bulk
RF1S25N06SM9A 制造商:Rochester Electronics LLC 功能描述:- Bulk
RF1S25N06SMR4643 制造商:Rochester Electronics LLC 功能描述:- Bulk
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*