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參數(shù)資料
| 型號： | RFP45N06LE |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs |
| 中文描述： | 45 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 427K |
| 代理商： | RFP45N06LE |
3
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
P
00
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
20
10
0
25
50
75
100
125
150
30
50
40
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
175
t, RECTANGULAR PULSE DURATION (s)
10
-5
10
-3
10
-2
10
-1
10
0
0.01
2
0.1
1
10
-4
10
1
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
SINGLE PULSE
Z
θ
J
,
T
0.5
0.2
0.1
0.05
0.01
0.02
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
10
100
1
100
10
I
D
,
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
100
μ
s
10ms
1ms
500
200
T
C
= 25
o
C
T
J
= MAX RATED
t, PULSE WIDTH (s)
500
10
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
I
D
,
I
=
I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 5V
THERMAL IMPEDANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= 10V
100
T
C
= 25
o
C
RFP45N06LE, RF1S45N06LESM
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| RF1S45N06SM | 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs |
| RFG45N06 | 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFP45N06S2497 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RFP4N05 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RFP4N05L | 制造商:Harris Corporation 功能描述: |
| RFP4N06 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
| RFP4N06L | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs |
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