參數(shù)資料
型號(hào): RFG30P06
廠商: HARRIS SEMICONDUCTOR
元件分類: JFETs
英文描述: 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs(30A, 50V, 0.066 Ω,P溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管)
中文描述: 30 A, 60 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247
文件頁(yè)數(shù): 4/8頁(yè)
文件大小: 71K
代理商: RFG30P06
4-136
NOTE: Refer to Intersil Application Notes AN9321 and AN9322,
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
-100
-10
-1
0.1
1
10
100
t
AV
, TIME IN AVALANCHE (ms)
I
A
,
If R = 0
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
If R
0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
V
GS
= -5V
V
GS
= -6V
V
GS
= -7V
0
0
-2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-4
-6
-8
-10
I
D
-30
-45
-60
-75
V
GS
= -20V
V
GS
= -10V
V
GS
= -8V
-15
V
GS
= -4.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
0
-2
-4
-6
-8
-10
0
-30
-45
-75
-60
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= -15V
-15
-55
o
C
25
o
C
175
o
C
2
1.5
1
0
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
N
0.5
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= -10V, I
D
= 30A
O
2
1.5
1
0.5
0
-80
-40
0
40
80
160
120
200
T
J
, JUNCTION TEMPERATURE (
o
C)
N
V
GS
= V
DS
, I
D
= 250
μ
A
2
1.5
1
0.5
0
-80
-40
0
40
80
120
160
200
N
B
T
J,
JUNCTION TEMPERATURE (
o
C)
I
D
= 250
μ
A
RFG30P06, RFP30P06, RF1S30P06SM
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