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參數(shù)資料
| 型號(hào)： | RFP23N06LE |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 23A, 60V, 0.065 Ohm, Logic Level,N-Channel Power MOSFETs(23A, 60V, 0.065 Ω,邏輯電平,N溝道功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 23 A, 60 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 411K |
| 代理商： | RFP23N06LE |
3
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
10
5
0
25
50
75
100
125
150
15
25
20
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
175
t, RECTANGULAR PULSE DURATION (s)
10
-5
10
-3
10
-2
10
-1
10
0
0.01
2
0.1
1
10
-4
10
1
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
SINGLE PULSE
Z
θ
J
,
T
0.5
0.2
0.1
0.05
0.01
0.02
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
10
1
100
10
I
D
,
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
100
μ
s
10ms
1ms
500
100
60
200
T
C
= 25
o
C
T
J
= MAX RATED
t, PULSE WIDTH (s)
500
10
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
100
I
D
,
I
=
I
25
175 - T
C
150
FOR TEMPERATURES
ABOVE 25
C DERATE PEAK
CURRENT AS FOLLOWS:
V
GS
= 5V
THERMAL IMPEDANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= 10V
T
C
= 25
o
C
RFP23N06LE, RF1S23N06LESM
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