參數(shù)資料
型號(hào)： RF1S30N06LESM
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs
中文描述： 30 A, 60 V, 0.047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： TO-263AB, 3 PIN
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 188K
代理商： RF1S30N06LESM
2004 Fairchild Semiconductor Corporation
RFP30N06LE, RF1S30N06LESM Rev. B1
Absolute Maximum Ratings
T
A
= 25
o
C, Unless Otherwise Specified
RFP30N06LE, RF1S30N06LESM
60
60
+10, -8
30
Refer to Peak Current Curve
Refer to UIS Curve
96
0.645
2
-55 to 175
UNITS
V
V
V
A
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DSS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrostatic Discharge Rating, MIL-STD-883, Category B(2). . . . . . . . . . . . . . . .ESD
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
W
W/
o
C
kV
o
C
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= 250
μ
A, V
GS
= 0V, Figure 11
V
GS
= V
DS
, I
D
= 250
μ
A, Figure 10
V
DS
= Rated B
VDSS
, V
GS
= 0
V
DS
= 0.8 x Rated B
VDSS
, V
GS
= 0, T
C
= 150
o
C
V
GS
= +10, -8V
I
D
= 30A, V
GS
= 5V, Figure 9
V
DD
= 30V, I
D
= 30A, R
L
= 1
, V
GS
= 5V,
R
GS
= 2.5
,
Figures 13, 16, 17
60
-
-
V
Gate to Threshold Voltage
1
-
2
V
Zero Gate Voltage Drain Current
-
-
25
μ
A
-
-
250
μ
A
Gate to Source Leakage Current
I
GSS
r
DS(ON)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(5)
Q
g(TH)
-
-
±
10
μ
A
Drain to Source On Resistance (Note 2)
-
-
0.047
Turn-On Time
-
-
140
ns
Turn-On Delay Time
-
11
-
ns
Rise Time
-
88
-
ns
Turn-Off Delay Time
-
30
-
ns
Fall Time
-
40
-
ns
Turn-Off Time
-
-
100
ns
Total Gate Charge
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 48V,
I
D
= 30A,
R
L
= 1.6
Figures 18, 19
-
51
62
nC
Gate Charge at 5V
-
28
34
nC
Threshold Gate Charge
-
1.8
2.6
nC
Input Capacitance
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
Figure 12
-
1350
-
pF
Output Capacitance
-
290
-
pF
Reverse Transfer Capacitance
-
85
-
pF
Thermal Resistance Junction to Case
-
-
1.55
o
C/W
o
C/W
Thermal Resistance Junction to Ambient
-
-
80
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
t
rr
I
SD
= 30A
I
SD
= 30A, dI
SD
/dt
= 100A/
μ
s
-
-
1.5
V
Diode Reverse Recovery Time
-
-
125
ns
NOTES:
2. Pulse Test: Pulse Width
≤
300ms, Duty Cycle
≤
2%.
3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
RFP30N06LE, RF1S30N06LESM
相關(guān)PDF資料
PDF描述
RF1S30N06LE 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs
RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs
RF1S30P05SM 30A, 50V, 0.065 Ohm,N-Channel PowerMOSFET(30A, 50V, 0.065 Ω,N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管)
RFP30P05 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs
RFP30P06 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RF1S30N06LESM9A 制造商:Rochester Electronics LLC 功能描述:- Bulk
RF1S30N06LESM9AR4365 制造商:Rochester Electronics LLC 功能描述:- Bulk
RF1S30N06LESMR4365 制造商:Rochester Electronics LLC 功能描述:- Bulk
RF1S30P05 制造商:Rochester Electronics LLC 功能描述:- Bulk
RF1S30P05SM 制造商:Rochester Electronics LLC 功能描述:- Bulk
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*