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參數(shù)資料
| 型號： | RF1S50N06SM |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 50 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 74K |
| 代理商： | RF1S50N06SM |
4-468
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFG50N06, RFP50N06
RF1S50N06SM
60
60
±
20
50
(Figure 5)
(Figure 6, 14, 15)
131
0.877
-55 to 175
UNITS
V
V
V
A
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Continuous Drain Current (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
W
W/
o
C
o
C
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 11)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 10)
V
DS
= 60V,
V
GS
= 0V
60
-
-
V
Gate to Source Threshold Voltage
2
-
4
V
Zero Gate Voltage Drain Current
T
C
= 25
o
C
T
C
= 150
o
C
-
-
1
μ
A
-
-
50
μ
A
Gate to Source Leakage Current
I
GSS
r
DS(ON)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(10)
Q
g(TH)
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
V
GS
=
±
20V
I
D
= 50A, V
GS
= 10V (Figures 9)
V
DD
= 30V, I
D
= 50A
R
L
= 0.6
, V
GS
= 10V
R
GS
= 3.6
(Figure 13)
-
-
±
100
nA
Drain to Source On Resistance
-
-
0.022
Turn-On Time
-
-
95
ns
Turn-On Delay Time
-
12
-
ns
Rise Time
-
55
-
ns
Turn-Off Delay Time
-
37
-
ns
Fall Time
-
13
-
ns
Turn-Off Time
-
-
75
ns
Total Gate Charge
V
GS
= 0 to 20V
V
GS
= 0 to 10V
V
GS
= 0 to 2V
V
DS
= 25V, V
GS
= 0V
f = 1MHz
(Figure 12)
V
DD
= 48V, I
D
= 50A,
R
L
= 0.96
I
g(REF)
= 1.45mA
(Figure 13)
-
125
150
nC
Gate Charge at 10V
-
67
80
nC
Threshold Gate Charge
-
3.7
4.5
nC
Input Capacitance
-
2020
-
pF
Output Capacitance
-
600
-
pF
Reverse Transfer Capacitance
-
200
-
pF
Thermal Resistance Junction to Case
(Figure 3)
-
-
1.14
o
C/W
o
C/W
o
C/W
Thermal Resistance Junction to Ambient
TO-247
-
-
30
TO-220, TO-263
-
-
62
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 50A
-
-
1.5
V
Reverse Recovery Time
t
rr
I
SD
= 50A, dI
SD
/dt = 100A/
μ
s
-
-
125
ns
RFG50N06, RFP50N06, RF1S50N06SM
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RF1S50N06SM9A | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1S50N06SM9AS2551 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S530 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S530SM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S530SM9A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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