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參數(shù)資料
| 型號： | RF1S40N10SM |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 40 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 371K |
| 代理商： | RF1S40N10SM |
2002 Fairchild Semiconductor Corporation
RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Rev. C
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Application Notes AN7254 and AN7260.
FIGURE 11. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
Typical Performance Curves
Unless Otherwise Specified
(Continued)
2.5
2.0
1.5
1.0
0.5
0
-50
0
50
100
150
200
N
T
J,
JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 10V, I
D
= 40A
O
1.50
1.25
1.00
0.75
0
-50
0
T
J,
JUNCTION TEMPERATURE (
o
C)
50
100
150
200
T
N
0.50
0.25
V
GS
= V
DS
I
D
= 250
μ
A
2.0
1.5
1.0
0.5
0
-50
0
T
J,
JUNCTION TEMPERATURE (
o
C)
50
100
150
200
N
B
I
D
= 250
μ
A
C
ISS
C
OSS
C
RSS
6000
4000
2000
1000
0
0
5
10
15
20
25
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
5000
3000
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
100
75
50
25
0
10
7.5
5.0
2.5
0
V
G
G
20
I
g(REF)
I
g(ACT)
80
I
g(REF)
I
g(ACT)
t, TIME (
μ
s)
R
L
= 2.5
I
g(REF)
= 2.25mA
V
GS
= 10V
V
D
D
V
DD
= BV
DSS
V
DD
= BV
DSS
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
0.75 BV
DSS
RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM
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