參數(shù)資料
型號： RF1K49224
廠商： INTERSIL CORP
元件分類： JFETs
英文描述： 3.5A/2.5A, 30V, 0.060/0.150 Ohms, Complementary LittleFET⑩ Power MOSFET
中文描述： 3.5 A, 30 V, 0.132 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA
文件頁數(shù)： 2/14頁
文件大?。?/td> 223K
代理商： RF1K49224
9-17
Absolute Maximum Ratings
T
A
= 25
o
C Unless Otherwise Specified
N-CHANNEL
30
30
±
20
P-CHANNEL
-30
-30
±
20
UNITS
V
V
V
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . .V
DSS
Drain to Gate Voltage (R
GS
= 20k
)
. . . . . . . . . . . . . . .V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (Pulse Width = 5s). . . . . . . . . . . . . . . . . . . . .I
D
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . .T
pkg
3.5
Refer to Peak Current Curve
Refer to UIS Curve
2
0.016
-55 to 150
2.5
Refer to Peak Current Curve
Refer to UIS Curve
2
0.016
-55 to 150
A
W
W/
o
C
o
C
300
260
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
N-Channel Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V
30
-
-
V
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A
1
-
3
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30V,
V
GS
= 0V
T
A
= 25
o
C
T
A
= 150
o
C
-
-
1
μ
A
-
-
50
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
100
nA
Drain to Source On Resistance
r
DS(ON)
I
D
= 3.5A
V
GS
= 10V
-
-
0.060
V
GS
= 4.5V
0.132
Turn-On Time
t
ON
V
DD
= 15V, I
D
3.5A,
R
L
= 4.29
, V
GS
= 10V,
R
GS
= 25
-
-
50
ns
Turn-On Delay Time
t
d(ON)
-
10
-
ns
Rise Time
t
r
-
30
-
ns
Turn-Off Delay Time
t
d(OFF)
-
60
-
ns
Fall Time
t
f
-
45
-
ns
Turn-Off Time
t
OFF
-
-
130
ns
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 20V
V
DD
= 24V,
I
D
3.5A,
R
L
= 6.86
I
g(REF)
= 1.0mA
-
35
45
nC
Gate Charge at 10V
Q
g(10)
V
GS
= 0V to 10V
-
13
17
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 2V
-
2.3
2.9
nC
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
575
-
pF
Output Capacitance
C
OSS
-
275
-
pF
Reverse Transfer Capacitance
C
RSS
-
100
-
pF
Thermal Resistance Junction to Ambient
R
θ
JA
Pulse width = 1s
Device mounted on FR-4 material
-
-
62.5
o
C/W
N-Channel Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 3.5A
-
-
1.25
V
Reverse Recovery Time
t
rr
I
SD
= 3.5A, dI
SD
/dt = 100A/
μ
s
-
-
45
ns
RF1K49224
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