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參數(shù)資料
| 型號： | RFP40N10LE |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs |
| 中文描述： | 40 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 413K |
| 代理商： | RFP40N10LE |
3
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
20
10
0
25
50
75
100
125
150
30
50
40
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
175
t, RECTANGULAR PULSE DURATION (s)
10
-5
10
-3
10
-2
10
-1
10
0
0.01
2
0.1
1
0.5
0.2
0.1
0.05
0.01
0.02
10
-4
10
1
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
SINGLE PULSE
Z
θ
J
,
T
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
10
100
1
100
10
I
D
,
LIMITED BY r
DS(ON)
AREA MAY BE
OPERATION IN THIS
100
μ
s
10ms
1ms
500
200
T
C
= 25
o
C
T
J
= 175
o
C
t, PULSE WIDTH (s)
500
10
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
100
I
D
,
V
GS
= 5V
THERMAL IMPEDANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= 10V
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I
I25
175
-------150
T
C
–
=
T
C
= 25
o
C
RFG40N10LE, RFP40N10LE, RF1S40N10LESM
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| RFP40N10LE_R4366 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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| RFP42N03L | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
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