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參數(shù)資料
| 型號： | RF1K49224 |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 3.5A/2.5A, 30V, 0.060/0.150 Ohms, Complementary LittleFET⑩ Power MOSFET |
| 中文描述： | 3.5 A, 30 V, 0.132 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 文件頁數(shù)： | 9/14頁 |
| 文件大小： | 223K |
| 代理商： | RF1K49224 |
9-24
FIGURE 30. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 31. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 32. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 33. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 34. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT
Typical Performance Curves (P-Channel)
(Continued)
0
0.5
1.0
1.5
2.0
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= -10V, I
D
= -2.5A
-80
-40
0
40
80
120
160
0.4
0.6
0.8
1.0
1.2
N
T
J
, JUNCTION TEMPERATURE (
o
C)
T
V
GS
= V
DS
, I
D
= -250
μ
A
1.2
1.1
1.0
0.9
0.8
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
I
D
= -250
μ
A
750
600
300
0
0
-5
-10
-15
-20
-25
C
450
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
150
C
ISS
C
OSS
C
RSS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
= C
DS
+ C
GD
-30.0
-22.5
-15.0
-7.5
0
t, TIME (
μ
s)
80
(
)
)
--------------------
-10.0
-7.5
-5.0
-2.5
0
V
D
,
V
G
,
V
DD
= BV
DSS
V
DD
= BV
DSS
R
L
= 12
I
g(REF)
= -0.26mA
V
GS
= -10V
PLATEAU VOLTAGES IN
DESCENDING ORDER:
20
(
(
)
)
Ig ACT
V
DD
= BV
DSS
V
DD
= 0.75 BV
DSS
V
DD
= 0.50 BV
DSS
V
DD
= 0.25 BV
DSS
RF1K49224
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