參數(shù)資料
型號： RF1S30P06
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs
中文描述： 30 A, 60 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA
文件頁數(shù)： 2/8頁
文件大?。?/td> 71K
代理商： RF1S30P06
4-134
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFG30P06, RFP30P06
RF1S30P06SM
-60
-60
±
20
30
Refer to Peak Current Curve
Refer to UIS Curve
135
0.9
-55 to 175
UNITS
V
V
V
A
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) (Figure 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Single Pulse Avalanche Rating (Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Linear Deratlng Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J,
T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
W
W/
o
C
o
C
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= 250
μ
A, V
GS
= 0V
V
GS
= V
DS
, I
D
= 250
μ
A
V
DS
= -60V, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, T
C
= 150
o
C
V
GS
=
±
20V
I
D
= -30A, V
GS
= -10V (Figure 9)
V
DD
= -30V, I
D
= 15A, R
L
= 2.00
, V
GS
= -10V
R
G
= 6.25
(Figure 13)
-60
-
-
V
Gate Threshold Voltage
-2
-
-4
V
Zero Gate Voltage Drain Current
-
-
-1
μ
A
μ
A
-
-
-25
Gate to Source Leakage Current
I
GSS
r
DS(ON)
t
(ON)
t
d(ON)
t
r
t
d(OFF)
t
f
t
(OFF)
Q
g(TOT)
Q
g(-10)
Q
g(TH)
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
-
-
0.065
Turn-On Time
-
-
80
ns
Turn-On Delay Time
-
15
-
ns
Rise Time
-
23
-
ns
Turn-Off Delay Time
-
28
-
ns
Fall Time
-
18
-
ns
Turn-Off Time
-
-
100
ns
Total Gate Charge
V
GS
= 0 to -20V
V
GS
= 0 to -10V
V
GS
= 0 to -2V
V
DS
= 25V, V
GS
= 0V, f = 1MHz
(Figure 12)
V
DD
= -48V, I
D
= 30A,
R
L
= 1.6
,
I
G(REF)
= 1.6mA
-
140
170
nC
Gate Charge at -10V
-
70
85
nC
Threshold Gate Charge
-
5.5
6.6
nC
Input Capacitance
-
3200
-
pF
Output Capacitance
-
800
-
pF
Reverse Transfer Capacitance
-
175
-
pF
Thermal Resistance, Junction to Case
-
-
1.11
o
C/W
o
C/W
o
C/W
Thermal Resistance, Junction to Ambient
TO-220, TO-263
-
-
62
TO-247
30
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
MAX
Source to Drain Diode Voltage (Note 2)
V
SD
t
RR
I
SD
= -30A
I
SD
= -30A, dI
SD
/dt = -100A/
μ
s
-
-
-1.5
V
Diode Reverse Recovery Time
-
-
150
ns
NOTE:
2. Pulse test: pulse width
≤
300
μ
s maximum, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
RFG30P06, RFP30P06, RF1S30P06SM
相關PDF資料
PDF描述
RF1S30P06SM 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs(30A, 50V, 0.066 Ω,P溝道增強型功率MOS場效應管)
RFG30P06 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs(30A, 50V, 0.066 Ω,P溝道增強型功率MOS場效應管)
RF1S40N10LESM 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs
RFP40N10LE 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs
RF1S40N10SM 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs
相關代理商/技術參數(shù)
參數(shù)描述
RF1S30P06SM 制造商:Rochester Electronics LLC 功能描述:- Bulk
RF1S30P06SM9A 功能描述:MOSFET -60V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RF1S40N10 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RF1S40N10LE 制造商:Rochester Electronics LLC 功能描述:- Bulk
RF1S40N10LESM 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs
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