參數(shù)資料
型號(hào)： RF1S30N06LESM
廠商： Harris Corporation
英文描述： 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs
中文描述： 30A條，60V的額定靜電，額定雪崩，邏輯電平N溝道增強(qiáng)型功率MOSFET
文件頁(yè)數(shù)： 3/8頁(yè)
文件大?。?/td> 188K
代理商： RF1S30N06LESM
2004 Fairchild Semiconductor Corporation
RFP30N06LE, RF1S30N06LESM Rev. B1
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
25
50
75
100
125
150
175
0
P
0
0.2
0.4
0.6
0.8
1.0
1.2
T
C
,
CASE TEMPERATURE (
o
C)
I
D
,
D
40
20
10
0
25
50
75
100
125
150
175
30
t, RECTANGULAR PULSE DURATION (s)
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
Z
θ
J
,
T
0.01
0.1
1
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
SINGLE PULSE
0.5
0.2
0.1
0.05
0.01
0.02
V
DS
,
DRAIN TO SOURCE VOLTAGE (V)
1
10
100
I
D
,
D
(
1
10
200
100
1ms
DC
100ms
10ms
100ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
T
C
= 25
o
C
T
J
= MAX RATED
t, PULSE WIDTH (s)
D
,
500
100
20
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
V
GS
= 5V
FOR TEMPERATURES
ABOVE 25
C DERATE PEAK
CURRENT AS FOLLOWS:
175
-----150
V
GS
= 10V
I
I25
–
=
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
T
C
= 25
o
C
RFP30N06LE, RF1S30N06LESM
相關(guān)PDF資料
PDF描述
RF1S30P05SM 30A, 50V, 0.065 Ohm,N-Channel PowerMOSFET(30A, 50V, 0.065 Ω,N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管)
RFP30P05 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs
RFP30P06 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs
RFG30P05 30A, 50V, 0.065 Ohm,N-Channel PowerMOSFET(30A, 50V, 0.065 Ω,N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管)
RF1S30P06 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs
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參數(shù)描述
RF1S30N06LESM9A 制造商:Rochester Electronics LLC 功能描述:- Bulk
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