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參數(shù)資料
| 型號(hào)： | RFP45N06 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs |
| 中文描述： | 45 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 73K |
| 代理商： | RFP45N06 |
4-458
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
300
100
10
1
0.01
0.1
1
10
t
AV,
TIME IN AVALANCHE (ms)
If R = 0
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
I
A
A
125
100
75
50
25
0
0
1.5
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
3
4.5
6
7.5
I
D
,
V
GS
= 10V
V
GS
= 7V
V
GS
= 6V
V
GS
= 5V
V
GS
= 4.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
C
V
GS
= 8V
0
1
2
3
4
5
6
7
8
9
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
125
100
75
50
25
0
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
25
o
C
-55
o
C
175
o
C
V
DD
= 15V
2.5
2
1.5
1
0.5
0
-80
-40
0
40
80
120
160
200
N
T
J,
JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5%MAX
V
GS
= 10V, I
D
= 45A
O
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
160
120
200
T
T
J,
JUNCTION TEMPERATURE (
o
C)
N
V
GS
= V
DS
, I
D
= 250
μ
A
2.0
1.5
1.0
0.5
0
-80
-40
0
40
80
120
160
200
N
B
T
J,
JUNCTION TEMPERATURE (
o
C)
I
D
= 250
μ
A
RFG45N06, RFP45N06, RF1S45N06SM
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