參數(shù)資料
型號(hào)： RF1S40N10SM
廠商： INTERSIL CORP
元件分類(lèi)： JFETs
英文描述： 40A, 100V, 0.040 Ohm, N-Channel Power MOSFETs
中文描述： 40 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 413K
代理商： RF1S40N10SM
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFG40N10LE, RFP40N10LE,
RF1S40N10LESM
100
100
±
10
40
Refer to Peak Current Curve
Refer to UIS Curve
150
1.00
-55 to 175
UNITS
V
V
V
A
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DSS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
W
W/
o
C
o
C
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 13)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 12)
V
DS
= 95V, V
GS
= 0V
V
DS
= 90V, V
GS
= 0V, T
C
= 150
o
C
V
GS
=
±
10V
I
D
= 40A, V
GS
= 5V
V
DD
= 50V, I
D
= 40A, R
L
= 1.25
,
V
GS
= 5V, R
GS
= 2.5
(Figures 10, 18, 19)
100
-
-
V
Gate Threshold Voltage
1
-
3
V
Zero Gate Voltage Drain Current
-
-
1
μ
A
μ
A
μ
A
-
-
250
Gate to Source Leakage Current
I
GSS
r
DS(ON)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(5)
Q
g(TH)
-
-
10
Drain to Source On Resistance (Note 2)
-
-
0.040
Turn-On Time
-
-
200
ns
Turn-On Delay Time
-
22
-
ns
Rise Time
-
140
-
ns
Turn-Off Delay Time
-
70
-
ns
Fall Time
-
65
-
ns
Turn-Off Time
-
-
165
ns
Total Gate Charge
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 80V,
I
D
= 40A,
R
L
= 2.0
(Figures 20, 21)
-
145
180
nC
Gate Charge at 5V
-
85
105
nC
Threshold Gate Charge
-
3
4
nC
Input Capacitance
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
(Figure 14)
-
3000
-
pF
Output Capacitance
-
500
-
pF
Reverse Transfer Capacitance
-
200
-
pF
Thermal Resistance Junction-to-Case
All Packages
-
-
1.0
o
C/W
o
C/W
o
C/W
Thermal Resistance Junction-to-Ambient
TO-247
-
-
30
TO-220AB and TO-263AB
-
-
80
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
t
rr
I
SD
= 40A
I
SD
= 40A, dI
SD
/dt = 100A/
μ
s
-
-
1.5
V
Diode Reverse Recovery Time
-
-
205
ns
NOTES:
2. Pulse test: pulse width
≤
80
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
RFG40N10LE, RFP40N10LE, RF1S40N10LESM
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