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參數(shù)資料
| 型號(hào)： | RF1S23N06LESM |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 23A, 60V, 0.065 Ohm, Logic Level,N-Channel Power MOSFETs(23A, 60V, 0.065 Ω,邏輯電平,N溝道功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 23 A, 60 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大?。?/td> | 411K |
| 代理商： | RF1S23N06LESM |
5
FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 14. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 15. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 17. UNCLAMPED ENERGY WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
-80
-40
0
40
80
120
160
N
T
T
J
, JUNCTION TEMPERATURE (
o
C)
200
2
1
0.5
0
1.5
V
GS
= V
DS
, I
D
= 250
μ
A
1.2
1.0
0.9
0.8
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
200
1.1
I
D
= 250
μ
A
1200
800
400
0
0
5
10
15
20
25
C
C
RSS
600
C
ISS
C
OSS
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
200
1000
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
60
45
30
15
0
20
)
)
---------------------
t, TIME (
μ
s)
80
)
)
---------------------
5.00
3.75
2.50
1.25
0
V
D
,
V
G
,
R
L
= 2.17
I
G(REF)
= 0.45mA
V
GS
= 5V
V
DD
= BV
DSS
V
DD
= 0.75 BV
DSS
V
DD
= 0.50 BV
DSS
V
DD
= 0.25 BV
DSS
PLATEAU VOLTAGES IN
DESCENDING ORDER:
V
DD
= BV
DSS
V
DD
= BV
DSS
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
RFP23N06LE, RF1S23N06LESM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFP23N06LE | 23A, 60V, 0.065 Ohm, Logic Level,N-Channel Power MOSFETs(23A, 60V, 0.065 Ω,邏輯電平,N溝道功率MOS場(chǎng)效應(yīng)管) |
| RF1S25N06SM | 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs |
| RF1S25N06 | 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs |
| RF1S25N06SM | 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs |
| RF1S30N06LESM | 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs(30A, 60V、額定ESD值0.047Ω邏輯電平N溝道功率MOS場(chǎng)效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RF1S23N06LESM9A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S25N06 | 功能描述:MOSFET Power MOSFET N-Ch 60V/25a/0.047 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1S25N06SM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S25N06SM9A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S25N06SMR4643 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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