參數(shù)資料
型號(hào): RFP45N06LE
廠商: HARRIS SEMICONDUCTOR
元件分類: JFETs
英文描述: 45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs
中文描述: 45 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù): 4/8頁(yè)
文件大?。?/td> 427K
代理商: RFP45N06LE
4
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. SWITCHING TIME vs GATE RESISTANCE
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
10
100
1
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
t
AV
= 0
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
0.01
0.1
If R = 0
1
10
100
200
0
20
60
0
1.5
3.0
4.5
6.0
40
100
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3V
V
GS
= 5V
V
GS
= 10V
V
GS
= 2.5V
V
GS
= 4V
80
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
C
V
GS
= 3.5V
0
3.0
4.5
6.0
1.5
0
20
40
60
100
175
o
C
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
-55
o
C
25
o
C
80
V
DD
= 15V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
20
40
60
80
0
3.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
D
,
2.0
3.5
4.5
5.0
I
D
= 45A
I
D
= 11.25A
I
D
= 22.5A
4.0
2.5
I
D
= 90A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
O
)
200
20
30
40
50
0
500
400
300
100
0
10
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
600
t
r
t
d(OFF)
t
f
t
d(ON)
V
DD
= 30V, I
D
= 45A, R
L
= 0.67
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
2.5
200
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 5V, I
D
= 45A
RFP45N06LE, RF1S45N06LESM
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