參數(shù)資料
型號: RF1S23N06LESM
廠商: HARRIS SEMICONDUCTOR
元件分類: JFETs
英文描述: 23A, 60V, 0.065 Ohm, Logic Level,N-Channel Power MOSFETs(23A, 60V, 0.065 Ω,邏輯電平,N溝道功率MOS場效應(yīng)管)
中文描述: 23 A, 60 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁數(shù): 8/8頁
文件大?。?/td> 411K
代理商: RF1S23N06LESM
8
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RFP23N06LE, RF1S23N06LESM
相關(guān)PDF資料
PDF描述
RFP23N06LE 23A, 60V, 0.065 Ohm, Logic Level,N-Channel Power MOSFETs(23A, 60V, 0.065 Ω,邏輯電平,N溝道功率MOS場效應(yīng)管)
RF1S25N06SM 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs
RF1S25N06 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs
RF1S25N06SM 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs
RF1S30N06LESM 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs(30A, 60V、額定ESD值0.047Ω邏輯電平N溝道功率MOS場效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RF1S23N06LESM9A 制造商:Rochester Electronics LLC 功能描述:- Bulk
RF1S25N06 功能描述:MOSFET Power MOSFET N-Ch 60V/25a/0.047 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RF1S25N06SM 制造商:Rochester Electronics LLC 功能描述:- Bulk
RF1S25N06SM9A 制造商:Rochester Electronics LLC 功能描述:- Bulk
RF1S25N06SMR4643 制造商:Rochester Electronics LLC 功能描述:- Bulk