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參數(shù)資料
| 型號(hào)： | RF1S50N06LESM |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 50A, 60V, 0.022 Ohm, Logic Level,N-Channel Power MOSFETs(50A, 60V, 0.022 Ω,邏輯電平,N溝道功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 50 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 412K |
| 代理商： | RF1S50N06LESM |
4
NOTE:
Refer to Intersil Application Notes AN9321 and AN9322
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. SWITCHING TIME vs GATE RESISTANCE
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
10
100
1
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
1
10
100
0.01
0.1
300
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R = 0
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
0
25
75
0
1.5
3.0
4.5
6.0
50
100
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3V
V
GS
= 5V
V
GS
= 10V
V
GS
= 2.5V
V
GS
= 4V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
0
3.0
4.5
6.0
1.5
0
25
50
75
100
175
o
C
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
-55
o
C
25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
20
40
60
80
0
3.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
D
,
2.0
I
D
= 100A
3.5
4.5
5.0
I
D
= 50A
I
D
= 12.5A
I
D
= 25A
4.0
2.5
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
O
)
200
20
30
40
50
0
500
400
300
100
0
10
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
600
t
r
t
d(OFF)
t
f
t
d(ON)
V
DD
= 30V, I
D
= 50A, R
L
= 0.6
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
2.5
200
O
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 5V, I
D
= 50A
RFG50N06LE, RFP50N06LE, RF1S50N06LESM
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