參數(shù)資料
型號： RF1S4N100SM
廠商： INTERSIL CORP
元件分類： JFETs
英文描述： 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs
中文描述： 4.3 A, 1000 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁數(shù)： 2/6頁
文件大?。?/td> 45K
代理商： RF1S4N100SM
4-529
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFP4N100,
RF1S4N100SM
1000
1000
4.3
17
±
20
(See UIS SOA Curve)
(Figures 4, 14, 15)
150
1.2
-55 to 150
UNITS
V
V
A
A
V
mJ
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
W
W/
o
C
o
C
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 10)
1000
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A
2
-
4
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 1000V, V
GS
= 0V
-
-
25
μ
A
V
DS
= 800V, V
GS
= 0V, T
C
= 150
o
C
-
-
100
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
r
DS(ON)
I
D
= 2.5A, V
GS
= 10V (Figures 8, 9)
-
-
3.500
Turn-On Delay Time
t
d(ON)
V
DD
= 500V, I
D
≈
3.9A, R
GS
= 9.1
,
R
L
= 120
)
-
-
30
ns
Rise Time
t
r
-
-
50
ns
Turn-Off Delay Time
t
d(OFF)
-
-
170
ns
Fall Time
t
f
-
-
50
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q
g(TOT)
V
GS
= 20V, I
D
= 3.9A, V
DS
= 800V
(Figure 13)
-
-
120
nC
Thermal Resistance Junction to Case
R
θ
JC
-
-
0.83
o
C/W
Thermal Resistance Junction to Ambient
R
θ
JA
-
-
62
o
C/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 4.3A
-
-
1.8
V
Reverse Recovery Time
t
rr
I
SD
= 3.9A, dI
SD
/dt = 100A/
μ
s
-
-
1000
ns
NOTES:
2. Pulse test: pulse width
≤
80
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
RFP4N100, RF1S4N100SM
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