參數(shù)資料
型號(hào)： RFP30N06LE
廠商： Harris Corporation
英文描述： 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs
中文描述： 30A條，60V的額定靜電，額定雪崩，邏輯電平N溝道增強(qiáng)型功率MOSFET
文件頁數(shù)： 3/8頁
文件大小： 80K
代理商： RFP30N06LE
6-262
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
25
50
75
100
125
150
175
0
P
0
0.2
0.4
0.6
0.8
1.0
1.2
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
40
20
10
0
25
50
75
100
125
150
175
30
t, RECTANGULAR PULSE DURATION (s)
10
-5
10
-3
10
-2
10
-1
10
0
10
1
10
-4
Z
θ
J
,
T
0.01
0.1
1
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
SINGLE PULSE
0.5
0.2
0.1
0.05
0.01
0.02
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
10
100
I
D
,
1
10
200
100
1ms
DC
100ms
10ms
100ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
T
C
= 25
o
C
T
J
= MAX RATED
t, PULSE WIDTH (s)
D
,
500
100
20
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
V
GS
= 5V
FOR TEMPERATURES
ABOVE 25
C DERATE PEAK
CURRENT AS FOLLOWS:
175
-----150
V
GS
= 10V
I
I25
–
=
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
T
C
= 25
o
C
RFP30N06LE, RF1S30N06LESM
相關(guān)PDF資料
PDF描述
RFP30N06LE 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs
RFP30N06LE 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs
RF1S30N06LESM 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs
RF1S30N06LE 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs
RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFP30N06LE 制造商:Intersil Corporation 功能描述:MOSFET N LOGIC TO-220
RFP30N06LE_NL 制造商:Fairchild Semiconductor Corporation 功能描述:
RFP30N06LE_Q 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFP-30N50T-S 制造商:ANAREN 制造商全稱:Anaren Microwave 功能描述:Aluminum Nitride Termination 30 Watts, 50W
RFP30N6LER4541 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
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