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參數(shù)資料
| 型號： | RF1S4N100SM |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs |
| 中文描述： | 4.3 A, 1000 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 45K |
| 代理商： | RF1S4N100SM |
4-533
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
ASIA
Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
FIGURE 18. GATE CHARGE TEST CIRCUIT
FIGURE 19. GATE CHARGE WAVEFORMS
Test Circuits and Waveforms
(Continued)
R
L
V
GS
+
-
V
DS
V
DD
DUT
I
g(REF)
V
DD
Q
g(TH)
V
GS
= 2V
Q
g(10)
V
GS
= 10V
Q
g(TOT)
V
GS
= 20V
V
DS
V
GS
I
g(REF)
0
0
RFP4N100, RF1S4N100SM
相關PDF資料 |
PDF描述 |
|---|---|
| RFP4N100 | 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs |
| RF1S50N06LESM | 50A, 60V, 0.022 Ohm, Logic Level,N-Channel Power MOSFETs(50A, 60V, 0.022 Ω,邏輯電平,N溝道功率MOS場效應管) |
| RFP50N06LE | CAP Tantalum-Wet Miniature 6V 8.0 uF +/-5% Silver can Axial High Reliability , TPC - Hilton |
| RFG50N06LE | 50A, 60V, 0.022 Ohm, Logic Level,N-Channel Power MOSFETs(50A, 60V, 0.022 Ω,邏輯電平,N溝道功率MOS場效應管) |
| RF1S50N06SM | 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| RF1S4N100SM9A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S50N06 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S50N06LE | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S50N06LESM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S50N06SM | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs |
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