- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374583 > RF1S4N100SM (INTERSIL CORP) 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs PDF資料下載
參數(shù)資料
| 型號(hào)： | RF1S4N100SM |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs |
| 中文描述： | 4.3 A, 1000 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 45K |
| 代理商： | RF1S4N100SM |
4-530
Typical Performance Curves
T
C
= 25
o
C, Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING SOA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
T
A
, AMBIENT TEMPERATURE (
o
C)
P
0.0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
4.5
3.0
1.5
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
I
D
,
4.0
1.0
0.5
3.5
2.5
2.0
1
10
100
1000
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
10
1
0.1
0.01
I
D
,
BY r
DS(ON)
AREA MAY BE LIMITED
RFP4N100, RF1S4N100SM
10
μ
s
100
μ
s
1ms
10ms
T
C
= 25
o
C
T
J
= MAX RATED
SINGLE PULSE
DC
0.01
0.10
1
10
t
AV
, TIME IN AVALANCHE (ms)
100
10
1
I
A
,
Idm
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
IF R = 0
t
av
= (L)(I
as
) / (1.3 x RATED BV
DSS
- V
DD
)
IF R
≠
0
t
av
= (L/R) In ((I
as
x R) / (1.3 x RATED BV
DSS
- V
DD
) + 1)
0
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
200
300
400
500
10
8
6
4
2
0
I
D
,
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
20
30
40
50
10
8
6
4
2
0
I
D
,
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
RFP4N100, RF1S4N100SM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFP4N100 | 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs |
| RF1S50N06LESM | 50A, 60V, 0.022 Ohm, Logic Level,N-Channel Power MOSFETs(50A, 60V, 0.022 Ω,邏輯電平,N溝道功率MOS場(chǎng)效應(yīng)管) |
| RFP50N06LE | CAP Tantalum-Wet Miniature 6V 8.0 uF +/-5% Silver can Axial High Reliability , TPC - Hilton |
| RFG50N06LE | 50A, 60V, 0.022 Ohm, Logic Level,N-Channel Power MOSFETs(50A, 60V, 0.022 Ω,邏輯電平,N溝道功率MOS場(chǎng)效應(yīng)管) |
| RF1S50N06SM | 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RF1S4N100SM9A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S50N06 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S50N06LE | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S50N06LESM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S50N06SM | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。