參數(shù)資料
型號(hào)： RF1S23N06LESM
廠商： HARRIS SEMICONDUCTOR
元件分類(lèi)： JFETs
英文描述： 23A, 60V, 0.065 Ohm, Logic Level,N-Channel Power MOSFETs(23A, 60V, 0.065 Ω,邏輯電平,N溝道功率MOS場(chǎng)效應(yīng)管)
中文描述： 23 A, 60 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 411K
代理商： RF1S23N06LESM
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFP23N06LE, RF1S23N06LESM
60
60
±
10
23
Refer to Peak Current Curve
Refer to UIS Curve
75
0.5
-55 to 175
UNITS
V
V
V
A
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
W
W/
o
C
o
C
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= 250
μ
A, V
GS
= 0V
V
GS
= V
DS
, I
D
= 250
μ
A
V
DS
= 55V, V
GS
= 0V
V
DS
= 50V, V
GS
= 0V, T
C
= 150
o
C
V
GS
=
±
10V
I
D
= 23A, V
GS
= 5V (Figure 11)
V
DD
= 30V, I
D
= 23A, R
L
= 1.30
,
V
GS
= 5V, R
GS
= 2.5
(Figures 15, 18, 19)
60
-
-
V
Gate to Threshold Voltage
1
-
-
V
Zero Gate Voltage Drain Current
-
-
1
μ
A
-
-
250
μ
A
Gate to Source Leakage Current
I
GSS
r
DS(ON)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(5)
Q
g(TH)
-
-
±
10
μ
A
Drain to Source On Resistance (Note 2)
-
-
0.065
Turn-On Time
-
-
160
ns
Turn-On Delay Time
-
12
-
ns
Rise Time
-
93
-
ns
Turn-Off Delay Time
-
28
-
ns
Fall Time
-
38
-
ns
Turn-Off Time
-
-
100
ns
Total Gate Charge
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 48V, I
D
= 23A,
R
L
= 2.09
,
I
g(REF)
= 0.45mA
(Figures 15, 20, 21)
-
38
48
nC
Gate Charge at 5V
-
20
25
nC
Threshold Gate Charge
-
0.90
1.2
nC
Input Capacitance
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
V
DS
= 25V, V
GS
= 0V, f = 1MHz
-
850
-
pF
Output Capacitance
-
250
-
pF
Reverse Transfer Capacitance
-
75
-
pF
Thermal Resistance Junction to Case
-
-
2.00
o
C/W
o
C/W
Thermal Resistance Junction to Ambient
TO-220AB, TO-263AB
-
-
80
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
t
rr
I
SD
= 23A
I
SD
= 23A, dI
SD
/dt = 100A/
μ
s
-
-
1.5
V
Diode Reverse Recovery Time
-
-
85
ns
NOTES:
2. Pulse Test: Pulse Width
≤
300ms, Duty Cycle
≤
2%.
3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
RFP23N06LE, RF1S23N06LESM
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