- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374583 > RFP30P06 (HARRIS SEMICONDUCTOR) 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs PDF資料下載
參數(shù)資料
| 型號： | RFP30P06 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs |
| 中文描述： | 30 A, 60 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 70K |
| 代理商： | RFP30P06 |
4-128
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
-20
-10
0
25
50
75
100
125
150
175
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
-30
-40
2
1
0.1
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
0.5
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
-200
-100
-10
-1
-1
-10
-100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
100ms
10ms
1ms
100
μ
s
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
V
DSS
MAX = -50V
T
C
= 25
o
C
DC
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
-100
t, PULSE WIDTH (s)
I
D
,
V
GS
= -10V
-10
FOR TEMPERATURES ABOVE 25
o
C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
I
I25
175
--------------------
T
C
–
=
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
-500
V
GS
= -20V
T
C
= 25
o
C
RFG30P05, RFP30P05, RF1S30P05SM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RFG30P05 | 30A, 50V, 0.065 Ohm,N-Channel PowerMOSFET(30A, 50V, 0.065 Ω,N溝道增強(qiáng)型功率MOS場效應(yīng)管) |
| RF1S30P06 | 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs |
| RF1S30P06SM | 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs(30A, 50V, 0.066 Ω,P溝道增強(qiáng)型功率MOS場效應(yīng)管) |
| RFG30P06 | 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs(30A, 50V, 0.066 Ω,P溝道增強(qiáng)型功率MOS場效應(yīng)管) |
| RF1S40N10LESM | 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RFP-375375-6X50-2 | 制造商:ANAREN 制造商全稱:Anaren Microwave 功能描述:Chip Terminations 300 Watts, 50ohm |
| RFP-375375-6Z50-2 | 制造商:ANAREN 制造商全稱:Anaren Microwave 功能描述:Surface Mount Terminations 30 Watts, 50ohm |
| RFP-375375N6X50-2 | 制造商:ANAREN 制造商全稱:Anaren Microwave 功能描述:Aluminum Nitride Terminations |
| RFP-375375N6Z50-2 | 制造商:ANAREN 制造商全稱:Anaren Microwave 功能描述:Aluminum Nitride Terminations |
| RFP3N45 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。