參數(shù)資料
型號: RF1S4N100SM
廠商: INTERSIL CORP
元件分類: JFETs
英文描述: 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs
中文描述: 4.3 A, 1000 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
文件頁數(shù): 5/6頁
文件大?。?/td> 45K
代理商: RF1S4N100SM
4-532
FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Test Circuits and Waveforms
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
FIGURE 16. SWITCHING TIME TEST CIRCUIT
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
0
20
Q
g
, TOTAL GATE CHARGE (nC)
40
60
80
V
G
,
0
4
8
12
16
I
D
= 3.9A
V
DS
= 200V
V
DS
= 400V
V
DS
= 100V
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
V
GS
R
L
R
G
DUT
+
-
V
DD
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
RFP4N100, RF1S4N100SM
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