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參數(shù)資料
| 型號： | RF1S50N06SM |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs |
| 中文描述： | 50 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 74K |
| 代理商： | RF1S50N06SM |
4-474
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RFG50N06, RFP50N06, RF1S50N06SM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RF1S50N06SM | 50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs |
| RF1S530SM | 14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs(14A, 100V, 0.160 Ohm,N溝道增強型功率MOS場效應管) |
| RF1S540SM | 28A, 100V, 0.077 Ohm,N-Channel PowerMOSFET(28A, 100V, 0.077 Ohm,N溝道增強型功率MOS場效應管) |
| RF1S60P03SM | 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs(60A, 30V, 0.027 Ω,P溝道功率MOS場效應管) |
| RFP60P03 | 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RF1S50N06SM9A | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1S50N06SM9AS2551 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S530 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S530SM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S530SM9A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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