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參數(shù)資料
| 型號(hào)： | RF1S30N06LESM |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs |
| 中文描述： | 30 A, 60 V, 0.047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 188K |
| 代理商： | RF1S30N06LESM |
2004 Fairchild Semiconductor Corporation
RFP30N06LE, RF1S30N06LESM Rev. B1
RFP30N06LE, RF1S30N06LESM
30A, 60V, ESD Rated, 0.047 Ohm, Logic
Level N-Channel Power MOSFETs
These are N-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.
These transistors incorporate ESD protection and are
designed to withstand 2kV (Human Body Model) of ESD.
Formerly developmental type TA49027.
Features
30A, 60V
r
DS(ON)
= 0.047
2kV ESD Protected
Temperature Compensating PSPICE
Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
Packaging
Ordering Information
PART NUMBER
PACKAGE
BRAND
RFP30N06LE
TO-220AB
P30N06LE
RF1S30N06LESM
TO-263AB
1S30N06L
NOTE: When ordering use the entire part number. Add suffix, 9A, to
obtain the TO-263 variant in tape and reel i.e. RF1S30N06LESM9A.
G
D
S
JEDEC TO-220AB
JEDEC TO-263AB
GATE
DRAIN (FLANGE)
SOURCE
DRAIN
DRAIN
(FLANGE)
GATE
SOURCE
Data Sheet
January 2004
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RF1S30N06LE | 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs |
| RF1S30N06LESM | 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs |
| RF1S30P05SM | 30A, 50V, 0.065 Ohm,N-Channel PowerMOSFET(30A, 50V, 0.065 Ω,N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管) |
| RFP30P05 | 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs |
| RFP30P06 | 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RF1S30N06LESM9A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S30N06LESM9AR4365 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S30N06LESMR4365 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S30P05 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S30P05SM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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