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參數(shù)資料
| 型號： | RF1S45N06SM |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs |
| 中文描述： | 45 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 82K |
| 代理商： | RF1S45N06SM |
3-36
RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM
FIGURE 7. NORMALIZED r
DS(ON)
vs JUNCTION
TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
TEMPERATURE
FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN
VOLTAGE vs TEMPERATURE
FIGURE 10. NORMALIZED POWER DISSIPATION vs
TEMPERATURE DERATING CURVE
FIGURE 11. TYPICAL CAPACITANCE vs VOLTAGE
FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT. REFER TO
APPLICATION NOTE AN7254 AND AN7260
Typical Performance Curves
(Continued)
PULSE DURATION = 250
μ
s, V
GS
= 10V, I
D
= 45A
2.5
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
200
r
D
,
T
J,
JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
160
120
200
T
T
J,
JUNCTION TEMPERATURE (
o
C)
V
G
,
I
D
= 250
μ
A
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
200
B
D
N
B
T
J,
JUNCTION TEMPERATURE (
o
C)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
175
P
T
C
, CASE TEMPERATURE (
o
C)
V
GS
= 0V, f = 1MHz
C
ISS
C
OSS
C
RSS
4000
3000
2000
1000
0
0
5
10
15
20
25
C
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
60
45
30
15
0
10
7.5
5.0
2.5
0
V
G
G
20
I
G(REF)
I
G(ACT)
80
I
G(REF)
I
G(ACT)
t, TIME (
μ
s)
V
DD
= BV
DSS
V
DD
= BV
DSS
R
L
= 1.33
I
G(REF)
= 1.5mA
V
GS
= 10V
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
0.75 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
V
D
D
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