參數(shù)資料
型號(hào)： RF1K4922396
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET⑩ Power MOSFET
中文描述： 2.5 A, 30 V, 0.36 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET, MS-012AA
文件頁(yè)數(shù)： 7/8頁(yè)
文件大?。?/td> 97K
代理商： RF1K4922396
8-167
PSPICE Electrical Model
SUBCKT RF1K49223 2 1 3 ;
rev 4/7/97
CA 12 8 7.29e-10
CB 15 14 5.01e-10
CIN 6 8 5.55e-10
DBODY 5 7 DBODYMOD
DBREAK 7 11 DBREAKMOD
DPLCAP 10 6 DPLCAPMOD
EBREAK 5 11 17 18 -35.46
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 5 10 8 6 1
EVTHRES 6 21 19 8 1
EVTEMP 6 20 18 22 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 1.27e-9
LSOURCE 3 7 4.20e-10
MMED 16 6 8 8 MMEDMOD
MSTRO 16 6 8 8 MSTROMOD
MWEAK 16 21 8 8 MWEAKMOD
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 19.3e-3
RGATE 9 20 7.44
RLDRAIN 2 5 10
RLGATE 1 9 12.7
RLSOURCE 3 7 4.2
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 65.37e-3
RVTHRES 22 8 RVTHRESMOD 1
RVTEMP 18 19 RVTEMPMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*48),2.5))}
.MODEL DBODYMOD D (IS = 3.30e-13 RS = 4.56e-2 TRS1 =6.98e-4 TRS2 =8.08e-7 CJO = 8.21e-10 TT = 3.51e-8 M=0.4)
.MODEL DBREAKMOD D (RS = 8.18e-1 TRS1 =5.28e-3 TRS2 = -7.18e-5
.MODEL DPLCAPMOD D (CJO = 2.52e-10 IS = 1e-30 N = 10 M=0.6)
.MODEL MMEDMOD PMOS (VTO= -1.95 KP=0.75 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=7.44)
.MODEL MSTROMOD PMOS (VTO= -2.44 KP= 7.25 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL MWEAKMOD PMOS (VTO= -1.68 KP=0.045 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=74.4 RS=0.1)
.MODEL RBREAKMOD RES (TC1 = 9.45e-4 TC2 = -1.01e-7)
.MODEL RDRAINMOD RES (TC1 = 3.69e-3 TC2 = 5.90e-6)
.MODEL RSLCMOD RES (TC1=3.46e-3 TC2= 1.26e-6)
.MODEL RSOURCEMOD RES (TC1=3.69e-3 TC2=5.90e-6)
.MODEL RVTHRESMOD RES (TC=-5.19e-4 TC2= 5.02e-6)
.MODEL RVTEMPMOD RES (TC1 = -3.54e-3 TC2 = -6.53e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 6.94 VOFF= 3.94)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 3.94 VOFF= 6.94)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.40 VOFF= -2.60)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.60 VOFF= 0.40)
.ENDS
NOTE:For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
;IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.
18
22
-
+
+
-
5
51
+
-
19
8
+
-
17
18
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
VBAT
RVTHRES
IT
17
18
19
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
DRAIN
2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ESLC
RSLC1
51
10
5
50
RSLC2
1
GATE
RGATE
EVTEMP
9
ESG
8
6
LGATE
RLGATE
20
+
-
+
-
EBREAK
6
RF1K49223
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