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參數(shù)資料
| 型號： | RFP23N06LE |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 23A, 60V, 0.065 Ohm, Logic Level,N-Channel Power MOSFETs(23A, 60V, 0.065 Ω,邏輯電平,N溝道功率MOS場效應管) |
| 中文描述： | 23 A, 60 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 411K |
| 代理商： | RFP23N06LE |
4
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. SWITCHING TIME vs GATE RESISTANCE
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
10
100
1
0.001
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
0.01
If R = 0
0.1
1
10
0
10
30
0
1.5
3.0
4.5
6.0
20
50
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 3V
V
GS
= 10V
V
GS
= 2.5V
V
GS
= 4V
40
V
GS
= 3.5V
V
GS
= 4.5V
V
GS
= 5V
T
C
= 25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
3
4.5
6
1.5
0
10
20
30
50
175
o
C
25
o
C
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
-55
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
40
50
100
150
200
0
3
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
D
,
2
I
D
= 46A
3.5
4.5
5
I
D
= 23A
I
D
= 5.75A
I
D
= 11.5A
4
2.5
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
O
)
V
DD
= 15V
100
20
30
40
50
0
250
200
150
50
0
10
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
t
r
t
d(OFF)
t
f
t
d(ON)
V
DD
= 30V, I
D
= 23A, R
L
= 1.30
0.5
1
1.5
2
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
2.5
200
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
O
V
GS
= 5V, I
D
= 23A
RFP23N06LE, RF1S23N06LESM
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