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參數(shù)資料
| 型號： | RF1S4N100SM |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs |
| 中文描述： | 4.3 A, 1000 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 文件頁數(shù)： | 4/6頁 |
| 文件大小： | 45K |
| 代理商： | RF1S4N100SM |
4-531
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. DRAIN CURRENT vs SOURCE TO DRAIN DIODE
VOLTAGE
Typical Performance Curves
T
C
= 25
o
C, Unless Otherwise Specified
(Continued)
0
2
4
6
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
5
4
3
2
1
0
I
D
,
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DS
= 15V
150
o
C
25
o
C
6
5
4
3
2
1
00
2
4
6
8
10
12
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
D
, DRAIN CURRENT (A)
r
D
,
O
)
N
3.0
2.0
1.5
1.0
0.5
-50
0
50
T
J
, JUNCTION TEMPERATURE (
o
C)
100
2.5
V
GS
= 10V, I
D
= 4.3A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
150
O
N
1.3
1.1
1.0
0.9
0.8
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
120
1.2
80
I
D
= 250
μ
A
160
B
1
10
100
3000
2500
2000
1500
1000
500
0
C
C
ISS
C
OSS
C
RSS
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
0
0.3
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
0.6
0.9
1.2
100
10
1
0.1
I
D
,
T
J
= 150
o
C
T
J
= 25
o
C
1.5
RFP4N100, RF1S4N100SM
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| RFP4N100 | 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RF1S4N100SM9A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S50N06 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S50N06LE | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S50N06LESM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| RF1S50N06SM | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs |
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