參數(shù)資料
型號(hào)： RF1S30N06LESM
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs
中文描述： 30 A, 60 V, 0.047 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： TO-263AB, 3 PIN
文件頁(yè)數(shù)： 7/8頁(yè)
文件大?。?/td> 188K
代理商： RF1S30N06LESM
2004 Fairchild Semiconductor Corporation
RFP30N06LE, RF1S30N06LESM Rev. B1
PSPICE Electrical Model
SUBCKT RFP30N06LE 2 1 3;
CA 12 8 1 3.34e-9
CB 15 14 3.44e-9
CIN 6 8 0 1.343e-9
rev 6/2/93
DBODY 7 5 DBDMOD
DBREAK 5 11 DBKMOD
DESD1 91 9 DESD1MOD
DESD2 91 7 DESD2MOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 75.39
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTO 20 6 18 8 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 7.22e-9
LSOURCE 3 7 6.31e-9
MOS1 16 6 8 8 MOSMOD M = 0.99
MOS2 16 21 8 8 MOSMOD M = 0.01
RBREAK 17 18 RBKMOD 1
RDRAIN 50 16 RDSMOD 11.86e-3
RGATE 9 20 2.52
RIN 6 8 1e9
RSCL1 5 51 RSLVCMOD 1e-6
RSCL2 5 50 1e3
RSOURCE 8 7 RDSMOD 26.6e-3
RVTO 18 19 RVTOMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 0.5
ESCL 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/89,7))
.MODEL DBDMOD D (IS = 3.80e-13 RS = 1.12e-2 TRS1 = 1.61e-3 TRS2 = 6.08e-6 CJO = 1.05e-9 TT = 3.84e-8)
.MODEL DBKMOD D (RS = 1.82e-1 TRS1 = 7.50e-3 TRS2 = -4.0e-5)
.MODEL DESD1MOD D (BV = 13.54 TBV1 = 0 TBV2 = 0 RS = 45.5 TRS1 = 0 TRS2 = 0)
.MODEL DESD2MOD D (BV = 11.46 TBV1 = -7.576e-4 TBV2 = -3.0e-6 RS = 0 TRS1 = 0 TRS2 = 0)
.MODEL DPLCAPMOD D (CJO = 0.591e-9 IS = 1e-30 N = 10)
.MODEL MOSMOD NMOS (VTO = 1.94 KP = 139.2 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL RBKMOD RES (TC1 = 1.07e-3 TC2 = -3.03e-7)
.MODEL RDSMOD RES (TC1 = 5.38e-3 TC2 = 1.64e-5)
.MODEL RSLVCMOD RES (TC1 = 1.75e-3 TC2 = 3.90e-6)
.MODEL RVTOMOD RES (TC1 = -2.15e-3 TC2 = -5.43e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.05 VOFF = -1.5)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.5 VOFF = -4.05)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -2.2 VOFF = 2.8)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 2.8 VOFF = -2.2)
.ENDS
NOTE: For further discussion of the PSPICE model, consult
A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options
; IEEE Power Electronics Specialist Conference Records 1991.
1
GATE
LGATE RGATE
EVTO
+
18
8
12
13
8
14
13
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
RIN
CIN
MOS1
MOS2
DBREAK
DBODY
LDRAIN
DRAIN
RSOURCE
LSOURCE
SOURCE
RBREAK
RVTO
VBAT
+
IT
VTO
ESG
DPLCAP
6
10
5
16
21
11
8
14
7
3
17
18
19
2
+
+
+
+
20
RDRAIN
ESCL
50
RSCL1
51
RSCL2
+
9
-
-
5
51
-
6
8
5
8
-
-
6
8
EBREAK
+
17
18
-
DESD1
DESD2
91
RFP30N06LE, RF1S30N06LESM
相關(guān)PDF資料
PDF描述
RF1S30N06LE 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs
RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs
RF1S30P05SM 30A, 50V, 0.065 Ohm,N-Channel PowerMOSFET(30A, 50V, 0.065 Ω,N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管)
RFP30P05 30A, 50V, 0.065 Ohm, P-Channel Power MOSFETs
RFP30P06 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs
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參數(shù)描述
RF1S30N06LESM9A 制造商:Rochester Electronics LLC 功能描述:- Bulk
RF1S30N06LESM9AR4365 制造商:Rochester Electronics LLC 功能描述:- Bulk
RF1S30N06LESMR4365 制造商:Rochester Electronics LLC 功能描述:- Bulk
RF1S30P05 制造商:Rochester Electronics LLC 功能描述:- Bulk
RF1S30P05SM 制造商:Rochester Electronics LLC 功能描述:- Bulk
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