參數(shù)資料
型號： RFP30P06
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs
中文描述： 30 A, 60 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù)： 2/8頁
文件大?。?/td> 70K
代理商： RFP30P06
4-127
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFG30P05, RFP30P05
RF1S30P05SM
-50
-50
±
20
30
Refer to Peak Current Curve
120
0.8
Refer to UIS Curve
-55 to 175
UNITS
V
V
V
A
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) (Figure 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Rating (Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J,
T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
W
W/
o
C
o
C
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= 250
μ
A, V
GS
= 0V
V
GS
= V
DS
, I
D
= 250
μ
A
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, T
C
= 150
o
C
V
GS
=
±
20V
I
D
= 30A, V
GS
= -10V (Figure 9)
V
DD
= -25V, I
D
= 15A,
R
L
= 1.67
, V
GS
= -10V,
R
G
= 6.25
(Figure 13)
-50
-
-
V
Gate Threshold Voltage
-2
-
-4
V
Zero Gate Voltage Drain Current
-
-
-1
μ
A
μ
A
-
-
-25
Gate to Source Leakage Current
I
GSS
r
DS(ON)
t
(ON)
t
d(ON)
t
r
t
d(OFF)
t
f
t
(OFF)
Q
g(TOT)
Q
g(-10)
Q
g(TH)
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
-
-
±
100
nA
Drain to Source On Resistance
-
-
0.065
Turn-On Time
-
-
80
ns
Turn-On Delay Time
-
15
-
ns
Rise Time
-
23
-
ns
Turn-Off Delay Time
-
28
-
ns
Fall Time
-
18
-
ns
Turn-Off Time
-
-
100
ns
Total Gate Charge
V
GS
= 0 to -20V
V
GS
= 0 to -10V
V
GS
= 0 to -2V
V
DS
= -25V, V
GS
= 0V
f = 1MHz
(Figure 12)
V
DD
= -40V,
I
D
= 30A, R
L
= 1.33
,
I
G(REF)
= 1.6mA
-
140
170
nC
Gate Charge at -10V
-
70
85
nC
Threshold Gate Charge
-
5.5
6.6
nC
Input Capacitance
-
3200
-
pF
Output Capacitance
-
800
-
pF
Reverse Transfer Capacitance
-
175
-
pF
Thermal Resistance, Junction to Case
-
-
1.25
o
C/W
o
C/W
o
C/W
Thermal Resistance, Junction to Ambient
TO-220, TO-263
-
-
62
TO-247
-
-
30
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage (Note 2)
V
SD
I
SD
= -30A
-
-
-1.5
V
Reverse Recovery Time
t
rr
I
SD
= -30A, dI
SD
/dt = -100A/
μ
s
-
-
150
ns
NOTES:
2. Pulsed: pulse duration = 300
μ
s max, duty cycle = 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
RFG30P05, RFP30P05, RF1S30P05SM
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