| 型號(hào) | 廠商 | 描述 | 
| bs817 2 | Diodes Inc. | P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR | 
| bs828 2 3 4 5 | GE Security, Inc. | DMOS Transistors (N-Channel)(N通道DMOS晶體管) | 
| bs829 2 | GE Security, Inc. | DMOS Transistors (P-Channel)(P通道DMOS晶體管) | 
| bs850 2 3 | Diodes Inc. | P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR | 
| bs850 2 3 4 5 | GE Security, Inc. | DMOS Transistors (P-Channel)(P通道DMOS晶體管) | 
| bs870 2 | Diodes Inc. | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | 
| bs870 2 3 4 5 | GE Security, Inc. | DMOS Transistors (N-Channel)(N通道DMOS晶體管) | 
| bs980-gs18 2 3 | Vishay Intertechnology,Inc. | RF PIN Diode | 
| bsm100gd120dlc 2 3 4 5 6 7 8 | INFINEON TECHNOLOGIES AG | IGBT-Module | 
| bsm100gp60 2 3 4 5 6 7 8 9 10 11 12 | INFINEON TECHNOLOGIES AG | Hochstzulassige Werte / Maximum rated values | 
| bsm150gb120dlc 2 3 4 5 6 7 8 | INFINEON TECHNOLOGIES AG | Technische Information / Technical Information | 
| bsm200ga120dlc 2 3 4 5 6 7 8 | INFINEON TECHNOLOGIES AG | Technische Information / Technical Information | 
| bsm200gb170dlc 2 3 4 5 6 7 8 | INFINEON TECHNOLOGIES AG | RP Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 09V; Output Voltage (Vdc): 05V; Power: 1W; Pot-Core Transformer - separated windings; High 5.2kVDC Isolation in compact size; Optional Continuous Short Circuit Protected; Pin Compatible with RH & RK Series; Approved for Medical Applications; UL and EN Safety Approvals; Efficiency to 82% | 
| bsm200gb60dlc 2 3 4 5 6 7 8 | INFINEON TECHNOLOGIES AG | Technicshe Information | 
| bsm25gd120dn2 2 3 4 5 6 7 8 9 | INFINEON TECHNOLOGIES AG | IGBT Power Module | 
| bsm25gd120dn2e3224 2 3 4 5 6 7 8 9 | INFINEON TECHNOLOGIES AG | IGBT Power Module | 
| bsm35gb120dlc 2 3 4 5 6 7 8 | INFINEON TECHNOLOGIES AG | vorlafige Daten preliminary data | 
| bsm75gb60dlc 2 3 4 5 6 7 8 | INFINEON TECHNOLOGIES AG | Hchstzulssige Werte Maximum rated values | 
| bso4822 2 3 4 5 6 7 8 | INFINEON TECHNOLOGIES AG | OptiMOS Small-Signal-Transistor | 
| bsp75g 2 3 4 5 6 7 8 | ZETEX PLC | 60V self-protected low-side IntelliFETTM MOSFET switch | 
| bsp75gta 2 3 4 5 6 7 8 | ZETEX PLC | 60V self-protected low-side IntelliFETTM MOSFET switch | 
| bsp75gtc 2 3 4 5 6 7 8 | ZETEX PLC | 60V self-protected low-side IntelliFETTM MOSFET switch | 
| bsr17a 2 | DIOTEC SEMICONDUCTOR AG | Surface mount Si-Epitaxial PlanarTransistors | 
| bsr19a 2 3 4 5 6 7 8 | NXP Semiconductors N.V. | NPN high voltage transistors | 
| bsr30 | ZETEX PLC | PNP SILICON PLANAR MEDIUM POWER TRANSISTOR | 
| bsr33 | ZETEX PLC | PNP SILICON PLANAR MEDIUM POWER TRANSISTOR | 
| bss123a | ZETEX PLC | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | 
| bss123w 2 3 | Diodes Inc. | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | 
| bss123 | ZETEX PLC | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | 
| bss123 | DIODES INC | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | 
| bss123-7 | DIODES INC | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | 
| bss138dw | Diodes Inc. | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | 
| bss138pw 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 | NXP SEMICONDUCTORS | 60 V, 360 mA N-channel Trench MOSFET | 
| bss138w-7 2 3 4 5 | DIODES INC | RECTIFIER BRIDGE 8A 50V 200A-ifsm 1V-vf 5uA-ir GBU 20/TUBE | 
| bss138w 2 3 4 5 | Diodes Inc. | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | 
| bss138 2 3 | ZETEX PLC | N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET | 
| bss138 2 3 | DIODES INC | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | 
| bss138-7 2 3 | DIODES INC | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | 
| bss72 | SEMELAB LTD | Bipolar NPN Device in a Hermetically sealed TO18 Metal Package | 
| bss76 2 | SEMELAB LTD | HIGH VOLTAGE PNP SILICON TRANSISTOR | 
| bss8402dw-7 2 3 4 5 | DIODES INC | COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | 
| bss8402dw 2 3 4 5 | Diodes Inc. | COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | 
| bss84dw 2 | Diodes Inc. | DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | 
| bss84w | Diodes Inc. | P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | 
| bst16 | ZETEX PLC | PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR | 
| bst39 | ZETEX PLC | NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR | 
| bst39 2 3 4 5 6 | NXP Semiconductors N.V. | NPN high-voltage transistors | 
| bst52 | ZETEX PLC | NPN SILICON PLANAR DARLINGTON TRANSISTOR | 
| bsv60 | SEMELAB LTD | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package | 
| bsv64 | CENTRAL SEMICONDUCTOR CORP | Small Signal Transistors |