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參數(shù)資料
| 型號： | BS870 |
| 廠商： | GE Security, Inc. |
| 英文描述： | DMOS Transistors (N-Channel)(N通道DMOS晶體管) |
| 中文描述： | DMOS晶體管（N溝道）（不適用通道的DMOS晶體管） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 236K |
| 代理商： | BS870 |
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C
ambient temperature unless otherwise specified
BS870
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
at I
D
= 100
μ
A, V
GS
= 0
V
(BR)DSS
60
80
–
V
Gate Threshold Voltage
at V
GS
= V
DS
, I
D
= 1 mA
V
GS(th)
1.0
2
3.0
V
Gate-Body Leakage Current
at V
GS
= 15 V, V
DS
= 0
I
GSS
–
–
10
nA
Drain Cutoff Current
at V
DS
= 25 V, V
GS
= 0
I
DSS
–
–
0.5
μ
A
Drain-Source ON Resistance
at V
GS
= 10 V, I
D
= 200 mA
R
DS(ON)
–
3.5
5.0
Thermal Resistance Junction to Substrate
Backside
R
thSB
–
–
320
1)
K/W
Thermal Resistance Junction to Ambient Air
R
thJA
–
–
450
1)
K/W
Forward Transconductance
at V
DS
= 10 V, I
D
= 200 mA, f = 1 MHz
g
m
–
200
–
mS
Input Capacitance
at V
DS
= 10 V, V
GS
= 0, f = 1 MHz
C
iss
–
30
–
pF
Switching Times
at V
GS
= 10 V, V
DS
= 10 V, R
D
= 100
Turn-On Time
Turn-Off Time
t
on
t
off
–
–
5
25
–
–
ns
ns
1)
Device on fiberglass substrate, see layout
.59 (15)
0.2 (5)
.03 (0.8)
.30 (7.5)
.12 (3)
.04 (1)
.06 (1.5)
.20 (5.1)
.08 (2)
.08 (2)
.04 (1)
Dimensions in inches (millimeters)
.47 (12)
Layout for R
thJ A
test
Thickness: Fiberglass 0.059 in (1.5 mm)
Copper leads 0.012 in (0.3 mm)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BS870/E8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 250MA I(D) | SOT-23 |
| BS870/E9 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 250MA I(D) | SOT-23 |
| BS870\E9 | 功能描述:MOSFET USE 781-2N7002K RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BS870_ | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| BS870_08 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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