參數(shù)資料
型號(hào)： BSM100GP60
廠商： INFINEON TECHNOLOGIES AG
元件分類： 功率晶體管
英文描述： Hochstzulassige Werte / Maximum rated values
中文描述： 135 A, 600 V, N-CHANNEL IGBT
封裝： MODULE-24
文件頁數(shù)： 2/12頁
文件大小： 211K
代理商： BSM100GP60
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM100GP60
Modul Isolation/ Module Isolation
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
NTC connected to Baseplate
V
ISOL
2,5
kV
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Diode Gleichrichter/ Diode Rectifier
Durchlaspannung
forward voltage
min.
typ.
max.
T
vj
= 150°C, I
F
= 100 A
V
F
-
1,16
-
V
Schleusenspannung
threshold voltage
T
vj
= 150°C
V
(TO)
-
-
0,8
V
Ersatzwiderstand
slope resistance
T
vj
= 150°C
r
T
-
-
4,8
m
Sperrstrom
reverse current
T
vj
= 150°C, V
R
= 1600 V
I
R
-
4
-
mA
Modul Leitungswiderstand, Anschlüsse-Chip
lead resistance, terminals-chip
T
C
= 25°C
R
AA'+CC'
-
4
-
m
Transistor Wechselrichter/ Transistor Inverter
Kollektor-Emitter Sttigungsspannung
collector-emitter saturation voltage
min.
typ.
max.
V
GE
= 15V, T
vj
= 25°C, I
C
=
V
GE
= 15V, T
vj
= 125°C, I
C
=
100 A
100 A
V
CE sat
-
-
1,95
2,2
2,45
-
V
V
Gate-Schwellenspannung
gate threshold voltage
V
CE
= V
GE
, T
vj
= 25°C, I
C
=
1,5 mA
V
GE(TO)
4,5
5,5
6,5
V
Eingangskapazitt
input capacitance
f = 1MHz, T
vj
= 25°C
V
CE
= 25 V, V
GE
= 0 V
V
GE
= 0V, T
vj
= 25°C, V
CE
=
V
GE
= 0V, T
vj
=125°C, V
CE
=
C
ies
-
4,3
-
nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
600 V
600 V
I
CES
-
-
3,0
4,0
500
-
μA
mA
Gate-Emitter Reststrom V
gate-emitter leakage current
CE
= 0V, V
GE
=20V, T
vj
=25°C
I
GES
-
-
300
nA
Einschaltverzgerungszeit (ind. Last)
turn on delay time (inductive load)
I
C
= I
Nenn
, V
CC
= 300 V
V
GE
= ±15V, T
vj
= 25°C, R
G
=
V
GE
= ±15V, T
vj
= 125°C, R
G
=
I
C
= I
Nenn
, V
CC
= 300 V
V
GE
= ±15V, T
vj
= 25°C, R
G
=
V
GE
= ±15V, T
vj
= 125°C, R
G
=
I
C
= I
Nenn
, V
CC
= 300 V
V
GE
= ±15V, T
vj
= 25°C, R
G
=
V
GE
= ±15V, T
vj
= 125°C, R
G
=
I
C
= I
Nenn
, V
CC
=
V
GE
= ±15V, T
vj
= 25°C, R
G
=
V
GE
= ±15V, T
vj
= 125°C, R
G
=
I
C
= I
Nenn
, V
CC
=
V
GE
= ±15V, T
vj
= 125°C, R
G
=
L
S
= 50 nH
I
C
= I
Nenn
, V
CC
= 300 V
V
GE
= ±15V, T
vj
= 125°C, R
G
=
L
S
= 50 nH
t
P
≤
10μs, V
GE
≤
15V, R
G
=
T
vj
≤
125°C, V
CC
=
dI/dt =
15 Ohm
15 Ohm
t
d,on
-
-
50
45
-
-
ns
ns
ns
ns
ns
ns
ns
ns
Anstiegszeit (induktive Last)
rise time (inductive load)
15 Ohm
15 Ohm
t
r
-
-
65
65
-
-
Abschaltverzgerungszeit (ind. Last)
turn off delay time (inductive load)
15 Ohm
15 Ohm
300 V
15 Ohm
15 Ohm
300 V
15 Ohm
t
d,off
-
-
260
285
-
-
Fallzeit (induktive Last)
fall time (inductive load)
t
f
-
-
35
45
-
-
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
E
on
-
4,2
-
mWs
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
15 Ohm
E
off
-
3,2
-
mWs
Kurzschluverhalten
SC Data
15 Ohm
360 V
4000 A/μs
I
SC
-
400
-
A
2(11)
DB-PIM-10.xls
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