參數(shù)資料
型號: BSS76
廠商: SEMELAB LTD
元件分類: 功率晶體管
英文描述: HIGH VOLTAGE PNP SILICON TRANSISTOR
中文描述: 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-206AA
封裝: HERMETIC SEALED, METAL, TO-18, 3 PIN
文件頁數(shù): 2/2頁
文件大小: 27K
代理商: BSS76
LAB
SEME
BSS76
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Parameter
OFF CHARACTERISTICS
Test Conditions
Min.
Typ.
Max.
Unit
V
nA
V
V
MHz
pF
ns
-300
-300
-6
-50
-500
-50
30
35
35
45
50
55
40
150
-0.15
-0.25
-0.3
-0.4
-0.8
-0.9
50
110
200
3.5
45
100
400
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
Collector
Emitter Breakdown Voltage
Collector
Base Breakdown Voltage
Emitter
Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
h
FE
DC Current Gain
V
CE(sat)
Collector
Emitter Saturation Voltage
V
BE(sat)
Base
Emitter Saturation Voltage
f
T
Current Gain Bandwidth Product
C
ob
Output Capacitance
C
ib
Input Capacitance
t
on
Turn
On Time
t
off
Turn
Off Time
I
C
= -10mA
I
C
= -100
μ
A
I
E
= 100
μ
A
V
CB
= -250V
V
CE
= -300V
V
BE
= -5V
I
B
= 0
I
E
= 0
I
C
= 0
I
E
= 0
I
B
= 0
I
C
= 0
V
CE
= -1V
V
CE
= -10V
V
CE
= -10V
V
CE
= -10V
I
C
= -10mA
I
C
= -30mA
I
C
= -10mA
I
C
= -30mA
I
C
= -1mA
I
C
= -10mA
I
C
= -30mA
I
C
= -100mA
I
B
= -1mA
I
B
= -3mA
I
B
= -1mA
I
B
= -3mA
I
C
= -20mA
f = 20MHz
I
E
= 0
f = 1MHz
I
C
= 0
f = 1MHz
I
B1
= -10mA
V
CC
= -100V
I
B2
= -10mA
V
CC
= -100V
V
CE
= -20V
V
CB
= -20V
V
EB
= -0.5V
I
C
= -50mA
I
C
= -50mA
ELECTRICAL CHARACTERISTICS
(TA= 25
°
C unless otherwise stated)
* Pulse Test: t
p
300
μ
s , d
2%.
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Document Number 5747
Issue 1
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