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參數(shù)資料
| 型號(hào)： | BSP75GTC |
| 廠商： | ZETEX PLC |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | 60V self-protected low-side IntelliFETTM MOSFET switch |
| 中文描述： | 3 A BUF OR INV BASED PRPHL DRVR, PDSO4 |
| 封裝： | TO-261AA, SOT-223, 4 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 382K |
| 代理商： | BSP75GTC |
BSP75G
Issue 4 - May 2006
Zetex Semiconductors plc 2006
3
www.zetex.com
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 37mm x 37mm x 1.6mm FR4 board with a high coverage of single sided 2oz weight
copper.
(b)For a device surface mounted on FR4 board and measured at t<=10s.
(c) For a device mounted on FR4 board with the minimum copper required for electrical connections.
Parameter
Symbol
Limit
Unit
Continuous drain-source voltage
V
DS
60
V
Drain-source voltage for short circuit protection
V
DS(SC)
36
V
Continuous input voltage
V
IN
-0.2 ... +10
V
Peak input voltage
V
IN
-0.2 ... +20
V
Operating temperature range
T
j
,
-40 to +150
°C
Storage temperature range
T
stg
-55 to +150
°C
Power dissipation at T
A
=25
°
C
(a)
P
D
2.5
W
Continuous drain current @ V
IN
=10V; T
A
=25°C
(a)
I
D
1.6
A
Continuous drain current @ V
IN
=5V; T
A
=25°C
(a)
I
D
1.4
A
Pulsed drain current @ V
IN
=10V
I
DM
5
A
Continuous source current (body diode)
(a)
I
S
3
A
Pulsed source current (body diode)
I
S
5
A
Unclamped single pulse inductive energy
E
AS
550
mJ
Load dump protection
V
LoadDump
80
V
Electrostatic discharge (human body model)
V
ESD
4000
V
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
40/150/56
Thermal resistance
Parameter
Symbol
Limit
Unit
Junction to ambient
(a)
R
JA
50
°C/W
Junction to ambient
(b)
R
JA
24
°C/W
Junction to ambient
(c)
R
JA
208
°C/W
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