- 您現在的位置：買賣IC網 > PDF目錄385193 > BST39 (NXP Semiconductors N.V.) NPN high-voltage transistors PDF資料下載
參數資料
| 型號： | BST39 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN high-voltage transistors |
| 中文描述： | NPN高壓型晶體管 |
| 封裝： | BST39<SOT89 (SOT89)|<<http://www.nxp.com/packages/SOT89.html<1<week 28, 2003,; |
| 文件頁數： | 3/6頁 |
| 文件大小： | 96K |
| 代理商： | BST39 |
2004 Dec 14
3
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
BST39; BST40
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1.
Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
Note
1.
Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
BST39
BST40
collector-emitter voltage
BST39
BST40
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
open emitter
400
300
V
V
V
CEO
open base
65
65
350
250
5
100
200
100
1.3
+150
150
+150
V
V
V
mA
mA
mA
W
°
C
°
C
°
C
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
open collector
T
amb
≤
25
°
C; note 1
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th(j-a)
R
th(j-s)
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
note 1
96
16
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
I
EBO
h
FE
V
CEsat
C
c
f
T
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
C
= 50 mA; I
B
= 4 mA
collector capacitance
transition frequency
I
E
= 0 A; V
CB
= 300 V
I
C
= 0 A; V
EB
= 5 V
I
C
= 20 mA; V
CE
= 10 V
40
20
100
500
2
nA
nA
mV
pF
MHz
I
E
= i
e
= 0 A; V
CB
= 10 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 10 V; f = 100 MHz 70
相關PDF資料 |
PDF描述 |
|---|---|
| BST52 | NPN SILICON PLANAR DARLINGTON TRANSISTOR |
| BSV60 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
| BSV64 | Small Signal Transistors |
| BSX60 | Small Signal Transistors |
| BSY34 | Small Signal Transistors |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BST39 T/R | 功能描述:兩極晶體管 - BJT TRANS HV TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BST39,115 | 功能描述:兩極晶體管 - BJT TRANS HV TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BST39115 | 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN 350V 0.1A SOT-89 |
| BST39T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 350V V(BR)CEO | 1A I(C) | SOT-89 |
| BST39TA | 功能描述:兩極晶體管 - BJT NPN High Voltage RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發(fā)布緊急采購，3分鐘左右您將得到回復。